Unlock instant, AI-driven research and patent intelligence for your innovation.

Thin film transistor device and method for manufacturing thin film device

A technology of thin film transistors and manufacturing methods, applied in the field of bottom-gate thin film transistor devices and their manufacture, can solve the problems of low conduction current, large channel layer bandgap, low charge mobility, etc., to ensure the conduction current , The effect of suppressing the cut-off current

Inactive Publication Date: 2013-04-17
PANASONIC CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The channel layer of this thin film transistor device has a large band gap, so although the off-current (leakage current when the gate is turned off) is low, the charge mobility is low, so there is an on-current (drain current when the gate is on). current) is also a problem with low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor device and method for manufacturing thin film device
  • Thin film transistor device and method for manufacturing thin film device
  • Thin film transistor device and method for manufacturing thin film device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach ）

[0049] Hereinafter, the thin film transistor device and its manufacturing method according to the present invention will be described based on the embodiments, but the present invention is defined by the claims. Therefore, among the structural elements in the following embodiments, the structural elements not described in the claims are not essential to achieve the subject of the present invention, but are described as elements constituting more preferable forms. Each drawing is a schematic diagram and is not necessarily strictly illustrated.

[0050] First, use figure 1 The structure of the thin film transistor device 10 according to the embodiment of the present invention will be described. figure 1 is a cross-sectional view schematically illustrating the structure of a thin film transistor device according to an embodiment of the present invention.

[0051] Such as figure 1 As shown, the thin film transistor device 10 according to the embodiment of the present invention ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A thin film transistor device (10) of the present invention is a bottom gate type thin film transistor device, which is provided with: a gate electrode (2) formed on a substrate (1); a gate insulating film (3) formed on the gate electrode; a crystalline silicon thin film (4), which is formed on the gate insulating film, and has a channel region; an amorphous silicon thin film (5) formed on the crystalline silicon thin film that includes the channel region; and a source electrode (8S) and a drain electrode (8D), which are formed above the amorphous silicon thin film. There is a positive correlative relationship between an optical band gap of the amorphous silicon thin film and an off current of the thin film transistor device.

Description

technical field [0001] The invention relates to a thin film transistor device and a manufacturing method of the thin film transistor device, in particular to a bottom gate type thin film transistor device and a manufacturing method thereof. Background technique [0002] Conventionally, a thin film transistor device called a thin film transistor (TFT: Thin Film Transistor) has been used in an active matrix type display device such as a liquid crystal display device. In display devices, TFTs are used as switching elements for selecting pixels, driving transistors for driving pixels, and the like. [0003] In recent years, an organic EL display using electroluminescence (EL: Electro Luminescence) using an organic material, which is one of the next-generation flat panel displays different from a liquid crystal display, has attracted attention. Unlike voltage-driven liquid crystal displays, organic EL displays are current-driven devices. Therefore, there is an urgent need to dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786
CPCH01L29/66765H01L29/78678H01L29/78696
Inventor 岸田悠治林宏川岛孝启西田健一郎
Owner PANASONIC CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com