Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single layer indium tin oxide (ITO) wiring structure

A wiring structure, single-layer technology, applied in the field of single-layer ITO wiring structure, can solve problems such as poor linearity, and achieve the effect of good linearity, large sensing area, and sensitive sensing

Inactive Publication Date: 2013-05-08
SUZHOU PIXCIR MICROELECTRONICS
View PDF8 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the wiring structure of this single-layer sensing layer solves the cost problem, the linearity is not good, and it can only be applied to small-sized touch screens.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single layer indium tin oxide (ITO) wiring structure
  • Single layer indium tin oxide (ITO) wiring structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0009] Such as figure 1 and figure 2 As shown, it is a schematic diagram of the wiring structure of the ITO of the present invention, which includes a first sensing electrode 1 and a second sensing electrode 2, and the second sensing electrode 2 is nested in the first sensing electrode 1, and each other with gaps. The first sensing electrodes 1 in the same row or column are connected, and the corresponding second sensing electrodes 2 in the same column or row are connected, that is, if the first sensing electrodes 1 in the same row are connected, Then the second sensing electrodes 2 in the same column are connected; if the first sensing electrodes 1 in the same column are connected, then the second sensing electrodes 2 in the same row are connected. In this embodiment, the first sensing electrodes 1 in the same row are connected, and the second sens...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A single layer indium tin oxide (ITO) wiring structure comprises a plurality of first induction electrodes and a plurality of second induction electrodes, the first induction electrodes are mutually connected correspondingly in a row direction, the second induction electrodes are mutually connected correspondingly in a column direction, and the second induction electrodes are nested in the first induction electrodes. Due to the fact that second induction electrodes are nested in the first induction electrodes, the single layer ITO wiring structure is large in induction area, more sensitive in induction and good in linearity.

Description

technical field [0001] The invention relates to an ITO wiring structure, in particular to a single-layer ITO wiring structure. Background technique [0002] At present, touch screens are widely used in the fields of instrumentation, computers, electronic watches, game machines, and household appliances. Touch screens usually include a display layer and a touch layer on the display layer. The touch layer is usually made of indium tin oxide ITO. An existing ITO wiring structure, which is a double-layer wiring structure, includes X-axis sensing electrodes and Y-axis sensing electrodes. Arranged in the form of columns, and a column of X-axis sensing electrodes and a column of Y-axis sensing electrodes are alternately arranged, wherein the X-axis sensing electrodes in the same column are connected, and the Y-axis sensing electrodes in the same row are connected. Two layers of ITO are laid on one side of the glass plate by bridging. This method is not only complicated in process,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/041
Inventor 何丽樊永召金莉
Owner SUZHOU PIXCIR MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com