Carbon nanometer tube/silicon honeycomb array preparing method

A technology of carbon nanotubes and arrays, which is applied in the field of preparation of nano-functional materials, and can solve the problems of low sensitivity, nonlinear response, and low emission current density of carbon nanotube-based humidity sensors.

Inactive Publication Date: 2008-03-26
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the relatively large turn-on field strength and relatively small emission current density caused by the electric field shielding effect of the carbon nanotube film field emission cold cathode; the carbon nanotube based humidity sensor has low sensitiv...

Method used

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  • Carbon nanometer tube/silicon honeycomb array preparing method
  • Carbon nanometer tube/silicon honeycomb array preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1. Put a P-type (111) single crystal silicon wafer with a resistivity of 0.015Ω·cm into the autoclave, and fill it with an etching solution composed of hydrofluoric acid with a concentration of 13.00mol / l and ferric nitrate solution with a concentration of 0.04mol / l , the solution volume filling degree of the autoclave is 80%, corroded at a temperature of 140° C. for 60 minutes, and the substrate material silicon nanoporous column array (Si-NPA) is prepared;

[0024] 2. Put the Si-NPA substrate into a horizontal tube furnace, raise it to 700°C under the protection of 60sccm nitrogen, keep the temperature constant, and change the gas to N 2 :H 2 =60sccm: the carrier gas of 30sccm, the xylene solution that will be dissolved with 0.015mol / l ferrocene is sent in the furnace with the speed of 0.2mol / l at the same time, after reacting 15min, solution stops conveying, under the protection of nitrogen, the temperature in the furnace is lowered. to room temperature. That is, a...

Embodiment 2

[0026] 1. Put a P-type (111) single crystal silicon chip with a resistivity of 0.2Ω·cm into the autoclave, and fill it with an etching solution composed of hydrofluoric acid with a concentration of 10.00mol / l and a ferric nitrate solution of 0.06mol / l , the solution volume filling degree of the autoclave is 85%, corroded at a temperature of 180° C. for 55 minutes, and the substrate material silicon nanoporous column array (Si-NPA) is prepared;

[0027] 2. Put the Si-NPA substrate into a horizontal tube furnace, raise it to 800°C under the protection of 60 sccm (standard cubic centimeter per minute) argon, keep the temperature constant, and change the gas to Ar:H 2 =50sccm: 40sccm carrier gas, at the same time, the ethylenediamine solution dissolved with 0.03mol / l nickelocene is sent to the furnace at a speed of 0.3mol / l, and the solution stops transporting after 10 minutes of reaction, and the temperature in the furnace is lowered under the protection of nitrogen. Bring to roo...

Embodiment 3

[0029] 1. Put a P-type (111) single crystal silicon wafer with a resistivity of 0.05Ω·cm into the autoclave, and fill it with an etching solution composed of hydrofluoric acid with a concentration of 8.00mol / l and ferric nitrate solution with a concentration of 0.08mol / l. , the solution volume filling degree of the autoclave is 88%, corroded at a temperature of 100° C. for 80 minutes, and the substrate material silicon nanoporous column array (Si-NPA) is prepared;

[0030] 2. Put the Si-NPA substrate into a horizontal tube furnace, raise it to 900°C under the protection of 60 sccm (standard cubic centimeter per minute) nitrogen, keep the temperature constant, and change the gas to N 2 :H 2 =40sccm: the carrier gas of 50sccm, simultaneously the toluene solution that will be dissolved with 0.02mol / l ferrocene and 0.02mol / l ferrocene cobalt is sent in the furnace with the speed of 0.4mol / l, after reaction 8min, solution stops conveying, nitrogen gas Under protection, the tempera...

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Abstract

The process of preparing carbon nanotube/silicon nest array includes the following steps: setting P-type monocrystalline silicon chip inside a autoclave, and filling solution of 8.00-22.00 mol/l concentration hydrofluoric acid and 0.01-0.50 mol/l ferric nitrate solution to etch at 50-200 deg.c for 10 min to 36 hr to preparing silicon with nanometer pore array as the substrate material; setting the substrate material inside a tubular furnace, heating to 500-1200 deg.c in protective atmosphere, feeding carbon source solution with dissolved organic metal salt along with the carrier gas to in-situ grow carbon nanotube for 1-60 min, and cooling to room temperature under the protection of gas to obtain carbon nanotube/silicon nest array with field emitting and humidity sensing functions. The carbon nanotube/silicon nest array device has the performance as shown, and the preparation process is simple and high in repetition rate.

Description

Technical field: [0001] The invention belongs to the technical field of preparation of nano functional materials, and relates to a carbon nanotube / silicon nest array with a nanocomposite structure with a regular array structure, good field emission performance and moisture sensitive performance in situ chemical vapor deposition technology Preparation. Background technique: [0002] Carbon nanotubes are considered to be the most promising next-generation large-area cathode because of their small tip curvature radius, low work function, high aspect ratio, and good electrical and thermal conductivity, which are suitable for the preparation of field emission cold cathodes. Ideal material for flat panel displays. Generally speaking, due to the existence of the electric field shielding effect, planar carbon nanotube films are not the best choice for field emission flat panel displays, and a possible option to improve the above problems is to prepare carbon nanotube films with pat...

Claims

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Application Information

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IPC IPC(8): B82B3/00H01J9/02H01L49/00H01L21/00H01L21/306
Inventor 李新建姜卫粉
Owner ZHENGZHOU UNIV
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