Metal nanoparticle/diamond composite film with excellent field emission performance and preparation method

A technology of metal nanoparticles and diamond thin films, applied in the field of optoelectronic materials, can solve the problems of difficult formation of rectification and amplification device depletion layers, low electron mobility of diamond, and difficult electronic devices, etc., to achieve enhanced carrier mobility and Electrical conductivity, fast electron conduction, good thermal conductivity

Inactive Publication Date: 2016-09-28
TAIYUAN UNIV OF TECH
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The electron mobility of doped diamond is low, and the low carrier mobility makes it difficult to form the depletion layer required for rectification and amplification devices in the diamond film, which is difficult to be used in the manufacture of electronic devices, which greatly limits its field Applications in the microelectronics industry such as emissive displays

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  • Metal nanoparticle/diamond composite film with excellent field emission performance and preparation method
  • Metal nanoparticle/diamond composite film with excellent field emission performance and preparation method
  • Metal nanoparticle/diamond composite film with excellent field emission performance and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1: the preparation method of Cu nanoparticle / micro-diamond composite film

[0034] First, the grease on the surface of the Si substrate was cleaned with acetone and methanol solutions in sequence, and then the surface of the single crystal silicon substrate was ground with diamond powder with a particle size of 5 nm, and the substrate was ultrasonically cleaned in methanol solution for 45 minutes, and finally It is dried with hot air and used as a substrate for the growth of micron diamond films. A microcrystalline diamond film was grown on a silicon wafer with a diameter of 6 cm and a thickness of 1.2 cm by using microwave plasma chemical vapor deposition equipment with a frequency of 2.45 GHz. The volume ratio of the reaction gas used in the experiment is H 2 (98.6%) / CH 4 (1.4%), the microwave power was kept at 7 kW, the gas flow rate was 406 sccm, the total pressure was 10 kPa, the temperature was 850 °C, and the growth time was 10 h, and a diamond film ...

Embodiment 2

[0039] Embodiment 2: the preparation method of Cu nanoparticle / super nano-diamond composite film

[0040] Microwave plasma chemical deposition equipment was used to prepare ultra-nano-diamond film on single crystal silicon substrate. Firstly, the ethanol suspension of diamond micropowder (0.5 μm in particle size) was used to ultrasonically vibrate the silicon wafer for 30 minutes, and then cleaned with ethanol after ultrasonication. Then dry the silicon wafer with hot air as the substrate for the growth of micron diamond film. Microwave plasma chemical vapor deposition equipment with a frequency of 2.45 GHz was used to grow ultra-nano-diamond films on a 2×2 cm silicon wafer. The experiment used Ar, H 2, CH 4 The mixed gas, the total gas flow rate is 166sccm, and the flow rates of each gas are: Ar is 122sccm-136sccm, H 2 24-38sccm, CH 4 The deposition power is 0.8-1.0kW, the pressure is 15-17kPa, the deposition temperature is 830°C, and the deposition time is 5-6h. The gra...

Embodiment 3

[0046] First, the grease on the surface of the Si substrate was cleaned with acetone and methanol solutions in sequence, and then the surface of the single crystal silicon substrate was ground with diamond powder with a particle size of 5 nm, and the substrate was ultrasonically cleaned in methanol solution for 45 minutes, and finally It is dried with hot air and used as a substrate for the growth of micron diamond films. A microcrystalline diamond film was grown on a silicon wafer with a diameter of 6 cm and a thickness of 1.2 cm by using microwave plasma chemical vapor deposition equipment with a frequency of 2.45 GHz. The volume ratio of the reaction gas used in the experiment is H 2 (98.6%) / CH 4 (1.4%), the microwave power was maintained at 7 kW, the gas flow rate was 406 sccm, the total pressure was 10 kPa, the temperature was 850 °C, and the growth time was 10 h, and a diamond film with a grain size of 2-5 μm was prepared.

[0047] A metal vacuum vapor arc ion implante...

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Abstract

The invention discloses a metal nanoparticle / diamond composite film with excellent field emission performance and a preparation method thereof, and belongs to the technical field of optoelectronic materials. Based on the ion implantation technology, metal ions with the energy ranging from 100 keV to 500 keV and the dosage ranging from 1,016 ions / cm<2> to 1,017 ions / cm<2> are implanted into a diamond thin film, then the thin film is annealed in N2 or Ar or H2 atmosphere, and the metal nanoparticle / diamond composite film can be obtained. The method is simple and easy to operate. Metal nanoparticles and diamonds in the obtained composite film are directly bonded, and stability is good. The composite film obtained through preparation is low in specific resistance, high in Hall mobility rate and excellent in field emission performance, and great scientific significance and engineering value for achieving application of the composite film to the fields such as semiconductor devices and field emission displayers are achieved.

Description

technical field [0001] The invention relates to a metal nanoparticle / diamond composite film with excellent field emission performance and a preparation method, belonging to the technical field of optoelectronic materials. Background technique [0002] Diamond is an important field emission cold cathode material. It has extremely high hardness, chemical stability and good thermal conductivity, especially its low electron affinity on the surface enables the diamond film to generate emission current at a very low field emission threshold electric field. Due to the difficulty and high cost of preparing single crystal diamond, the research work in this area has been slow. At present, the research on field emission of diamond thin films at home and abroad mainly focuses on diamond microtip arrays and diamond thin film flat electrodes. Although the diamond microtip array can obtain a large current density, the difficulty of the preparation process is not easy to obtain a uniform ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C14/48C23C14/58
CPCC23C14/48C23C14/5806C23C16/271C23C16/276C23C16/278
Inventor 申艳艳于盛旺黑鸿君贺志勇林乃明
Owner TAIYUAN UNIV OF TECH
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