Green Laser Diode and Its Waveguide Structure Based on Group III Nitride

A technology of laser diodes and nitrides, applied in the structure of optical waveguide semiconductors, lasers, laser components, etc.

Inactive Publication Date: 2015-09-16
CORNING INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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But high output optical loss requires high optical gain

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  • Green Laser Diode and Its Waveguide Structure Based on Group III Nitride
  • Green Laser Diode and Its Waveguide Structure Based on Group III Nitride
  • Green Laser Diode and Its Waveguide Structure Based on Group III Nitride

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[0016] Features and advantages of the invention are described below at times with reference to specific embodiments. However, this invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0017] The term "Group III nitride based" as used herein with reference to a device or device layer means that the device or device layer is fabricated on a Group III nitride substrate. Group III nitride materials include, but are not limited to, gallium nitride, ternary alloys such as aluminum gallium nitride (AlGaN) and indium gallium nitride (InGaN), and quaternary alloys such as aluminum indium gallium nitride (AlInGaN) .

[0018] Brackets in the formulas representing the various Group III nitrides indicate optional elements, while elements outside the b...

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Abstract

Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency.

Description

[0001] Related Application Cross Reference [0002] This application claims priority under 35 U.S.C. §120 to U.S. Application Serial No. 12 / 885,951, filed September 20, 2010. technical field [0003] The present invention relates to semiconductor lasers, and more particularly, to group III nitride-based laser diodes emitting green light and waveguide structures thereof. Background technique [0004] The combination of high optical limit and low internal optical loss is required to achieve high electrical-to-optical conversion efficiency (WPE) in laser diodes. Electro-optical conversion efficiency is a commonly used figure of merit defined as the ratio of the optical power output from a laser diode to the electrical power input to the laser diode. For example, internal optical loss, such as photons being absorbed by the device layer or carriers in the device layer, will reduce the optical output power. A structure with both low internal optical loss and high output optical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343H01S5/20
CPCH01S5/2031H01S5/2018B82Y20/00H01S5/3211H01S5/34333H01S5/20H01S5/343
Inventor R·巴特D·兹佐夫C-E·扎
Owner CORNING INC
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