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Gallium arsenide (GaAs) base high-strain quantum well containing boron (B) and preparation method thereof and semiconductor laser unit

A high-strain, quantum well technology, applied in the direction of semiconductor lasers, lasers, phonon exciters, etc., can solve the problems of high surface energy of well layer materials, inability to expand the emission wavelength of quantum wells, and large lattice mismatch, etc., to achieve improved The effect of optical quality

Inactive Publication Date: 2014-12-31
BEIJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problems to be solved in the present invention are: 1) How to solve the problem of In and Sb components in the InGaAs and GaAsSb well layers due to the large lattice mismatch (or called strain) between the InGaAs and GaAsSb well layers and the GaAs barrier layer Can not continue to improve, so that the InGaAs / GaAs and GaAsSb / GaAs quantum well light emission wavelength cannot be expanded
2) How to solve the problem that the luminescence wavelength of InGaAs / GaAs and GaAsSb / GaAs quantum wells cannot be expanded due to the high surface energy of the well layer materials in InGaAs / GaAs and GaAsSb / GaAs high-strain quantum wells

Method used

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  • Gallium arsenide (GaAs) base high-strain quantum well containing boron (B) and preparation method thereof and semiconductor laser unit
  • Gallium arsenide (GaAs) base high-strain quantum well containing boron (B) and preparation method thereof and semiconductor laser unit
  • Gallium arsenide (GaAs) base high-strain quantum well containing boron (B) and preparation method thereof and semiconductor laser unit

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Embodiment 1

[0029] In the embodiment of the present invention, the method for growing a 5-period BInGaAs / GaAs high-strain multiple quantum well structure on a GaAs substrate (GaAs substrate) can increase the light emission wavelength of the GaAs-based InGaAs / GaAs high-strain multiple quantum wells, such as figure 1 shown, including steps:

[0030] a. A layer of GaAs buffer layer (GaAs buffer layer) is grown on the GaAs substrate to ensure that the surface of the substrate is smooth and free of obvious defects;

[0031] b, Growth of highly strained B on top of the GaAs buffer layer y In x Ga 1-x-y As well layer. The incorporation of B will offset the excessively large lattice constant caused by the incorporation of In and Sb. While B is incorporated, increase the molar flow rate of In or Sb source, so that the In or Sb composition in the well layer is further increased; high strain B y In x Ga 1-x-y The In composition in the As well layer is greater than or equal to 30%, and can be ...

Embodiment 2

[0041] This embodiment discloses a GaAs-based B-containing high-strain quantum well prepared by the method described in Embodiment 1, which uses BInGaAs or BGaAsSb as the well layer and GaAs as the barrier layer.

Embodiment 3

[0043] This embodiment discloses an edge-emitting semiconductor laser, which uses the B-containing quantum well described in Embodiment 2 as the active region, such as figure 2 , Figure 4 shown.

[0044] The difference between this embodiment and the existing GaAs-based InGaAs / GaAs, GaAsSb / GaAs quantum well edge-emitting lasers lies in that the gain medium material in the active region is different. Thus, using figure 2 with Figure 4 Structured lasers can work at longer wavelengths.

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Abstract

The invention relates to the field of semiconductor optoelectronic materials and devices, and discloses a preparation method of a gallium arsenide (GaAs) base high-strain quantum well containing boron (B). The preparation method of the GaAs base high-strain quantum well containing the B comprises the following steps: S1, growing a GaAs buffering layer on a GaAs substrate; S2, growing a high-strain well layer on the top of the GaAs buffering layer, and replenishing a B source in the growth process to form the high-strain well layer containing the B; and S3, growing a GaAs barrier layer or a strain-compensated barrier layer on the high-strain well layer containing the B, and forming the GaAs base high-strain quantum well containing the B. the invention further discloses the GaAs base high-strain quantum well containing the B and an edge emitting semiconductor laser unit. Due to the fact that the B is incorporated into indium (In) GaAs or GaAS stibium (Sb) to compensate lattice constant enlargement caused by the fact that In and Sb are incorporated into GaAs, regulation and control of a mismatch degree of lattices are achieved. Due to the fact that the B is incorporated into the InGaAs or the GaAsSb to reduce surface energy of the high-strain InGaAs or the high-strain GaAsSb, luminescence wave length of the InGaAs / GaAs and luminescence wave length of the InGaAs / GaAs high-strain quantum well are further expanded. Due to the fact that strain compensation is carried out on the high-strain well layer containing the B, optical quality of the GaAs base high-strain quantum well containing the B is improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic materials and devices, in particular to a GaAs-based high-strain quantum well containing B (boron) and a preparation method thereof, and an edge-emitting semiconductor laser based on the high-strain quantum well containing B. Background technique [0002] GaAs (gallium arsenide) based InGaAs / GaAs and GaAsSb / GaAs highly strained quantum well (Quantum Well, QW) structure (where InGaAs and GaAsSb are well layers, GaAs is barrier layer) because it can realize long wavelength on GaAs substrate Luminescence has always attracted people's attention and has been widely used in the development of semiconductor lasers, photodetectors and superradiant tubes. [0003] For InGaAs / GaAs highly strained quantum wells, the longest room temperature photoluminescence spectrum (RT-PL spectrum) of InGaAs / GaAs highly strained QWs grown on GaAs substrate due to the confinement of the In (indium) composition in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
Inventor 王琦贾志刚郭欣任晓敏黄永清
Owner BEIJING UNIV OF POSTS & TELECOMM
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