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High-indium component gallium arsenic/indium gallium arsenic quantum pit structure and preparation method thereof

An indium gallium arsenic and quantum well technology, which is applied in the field of molecular beam epitaxy growth, can solve problems such as the difficulty in growing InGaAs quantum well structures

Inactive Publication Date: 2005-06-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The growth of InGaAs quantum well structure with large strain and high In composition is difficult

Method used

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Embodiment

[0046] The embodiment of the present invention is to provide the key technical method of its molecular beam epitaxy growth preparation, and provide a laser structure using the above invention as the core. The preparation technology for realizing the present invention can adopt molecular beam epitaxy or organometallic compound vapor phase epitaxy technology. In the molecular beam epitaxy technology, the first step is to grow the GaAs transition layer. The usual GaAs substrate temperature and appropriate growth rate are used. The second step is to reduce the substrate temperature by a certain range, and grow the GaAs barrier layer after stabilization. The growth rate is not high. Change. The third step is to grow the InGaAs quantum well layer with an appropriate growth rate at the same substrate temperature. The second to third steps can be repeated 1-3 times to obtain a single quantum well, double quantum well or triple quantum well structure. In the fourth step, the substrat...

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Abstract

A high indium component gallium arsenic / indium gallium arsenic quantum trap structure, including: a transmitting layer, forming a full crystal surface on the substrate surface; a first barrier layer, forming the energy barrier to the current carrier, and the first barrier layer is set above the transmitting layer; a quantum trap layer, limiting the luminous current carrier in the trap layer; a secondary barrier layer, forming the energy barrier corresponding to the first barrier layer, and the secondary barrier layer is set above the quantum trap layer; a surface covering protective layer, protecting the quantum trap structure and preparing the contact electrode, and the protective layer is set on the secondary barrier layer.

Description

technical field [0001] The invention relates to a semiconductor compound material gallium arsenic / indium gallium arsenic (GaAs / In x Ga 1-x As) quantum well structure and its epitaxial growth method, especially GaAs / In which can obtain luminescence wavelength greater than 1.2 microns (μm) and In / Ga composition ratio x > 40% x Ga 1-x A new method for molecular beam epitaxy growth of As quantum well structure. Background technique [0002] GaAs / In x Ga 1-x As / GaAs quantum well material is a core semiconductor material that emits light in the near-infrared band and is used to prepare various optoelectronic devices. Since GaAs / InGaAs / GaAs is a large mismatch strain material, within the range of critical thickness (more than the critical thickness, the stress will be released, and the epitaxial layer crystal will produce dislocation defects), the composition of In in the InGaAs layer is small, and its core working luminescence wavelength Generally less than 1.1 microns. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/04H01S5/343
Inventor 牛智川徐晓华倪海桥徐应强韩勤吴荣汉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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