A hem crystal growth method under the protection of inert gas
A technology of crystal growth and inert gas, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high helium price, lack of helium resources, production cost and reduce purchase risk, etc., and achieve growth effect Good, save production cost, reduce the effect of procurement risk
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0023] A HEM crystal growth method under the protection of an inert gas, it comprises the following steps:
[0024] (1) Put the crystal into the crystal growth furnace;
[0025] (2) Seal the crystal growth furnace and carry out vacuum treatment until the vacuum degree in the furnace reaches 5 millitorr;
[0026] (3) Slowly fill the crystal growth furnace with HE-AR inert mixed gas with a volume ratio of HE and AR of 1:2.5 to remove impurities;
[0027] (4) Use a heater to start heating the crystal growth furnace for HEM crystal growth. The temperature in the furnace is always not lower than 2000°C. During the crystal growth process, continuously fill the HE-AR inert mixed gas until the crystal growth is completed.
[0028] The chemical fluid processing speed of the HE and AR inert mixed gas is 0.7 CFH.
[0029] Described heater is graphite heater.
[0030] The crystal growth furnace is a molybdenum crucible.
Embodiment 2
[0032] A HEM crystal growth method under the protection of an inert gas, it comprises the following steps:
[0033] (1) Put the crystal into the crystal growth furnace;
[0034] (2) Seal the crystal growth furnace and carry out vacuum treatment until the vacuum degree in the furnace reaches 10 millitorr;
[0035] (3) Slowly fill the crystal growth furnace with HE-AR inert mixed gas with a volume ratio of HE and AR of 1:1.5 to remove impurities;
[0036] (4) Use a heater to start heating the crystal growth furnace for HEM crystal growth. The temperature in the furnace is always not lower than 2000°C. During the crystal growth process, continuously fill the HE-AR inert mixed gas until the crystal growth is completed.
[0037] The chemical fluid processing speed of the HE and AR inert mixed gas is 1 CFH.
Embodiment 3
[0039] A HEM crystal growth method under the protection of an inert gas, it comprises the following steps:
[0040] (1) Put the crystal into the crystal growth furnace;
[0041] (2) Seal the crystal growth furnace and carry out vacuum treatment until the vacuum degree in the furnace reaches 5 millitorr;
[0042] (3) Slowly fill the crystal growth furnace with HE-AR inert mixed gas with a volume ratio of HE and AR of 1:3 to remove impurities;
[0043] (4) Use a heater to start heating the crystal growth furnace for HEM crystal growth. The temperature in the furnace is always not lower than 2000°C. During the crystal growth process, continuously fill the HE-AR inert mixed gas until the crystal growth is completed.
[0044] The chemical fluid processing speed of the HE and AR inert mixed gas is 0.5 CFH.
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More