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A hem crystal growth method under the protection of inert gas

A technology of crystal growth and inert gas, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high helium price, lack of helium resources, production cost and reduce purchase risk, etc., and achieve growth effect Good, save production cost, reduce the effect of procurement risk

Active Publication Date: 2016-01-06
贵阳嘉瑜光电科技咨询中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the distribution of helium reserves in the world is very uneven. North America, North Africa, Russia and other places have relatively rich helium resources, while my country's helium resources are seriously scarce, and only a small amount of helium is stored in Sichuan.
For a long time, my country's helium (including liquid helium) used in industrial production and scientific experiments has basically relied on foreign imports, so the price of domestic helium is relatively high, and the supply cycle of large quantities is very long
At the same time, with the development of my country's national defense industry technology, the demand for helium is increasing. Once a helium embargo occurs in an extraordinary period, the production cost and the risk of reducing procurement will be greater, which will definitely affect my country's national defense security on a large scale. and economic development

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A HEM crystal growth method under the protection of an inert gas, it comprises the following steps:

[0024] (1) Put the crystal into the crystal growth furnace;

[0025] (2) Seal the crystal growth furnace and carry out vacuum treatment until the vacuum degree in the furnace reaches 5 millitorr;

[0026] (3) Slowly fill the crystal growth furnace with HE-AR inert mixed gas with a volume ratio of HE and AR of 1:2.5 to remove impurities;

[0027] (4) Use a heater to start heating the crystal growth furnace for HEM crystal growth. The temperature in the furnace is always not lower than 2000°C. During the crystal growth process, continuously fill the HE-AR inert mixed gas until the crystal growth is completed.

[0028] The chemical fluid processing speed of the HE and AR inert mixed gas is 0.7 CFH.

[0029] Described heater is graphite heater.

[0030] The crystal growth furnace is a molybdenum crucible.

Embodiment 2

[0032] A HEM crystal growth method under the protection of an inert gas, it comprises the following steps:

[0033] (1) Put the crystal into the crystal growth furnace;

[0034] (2) Seal the crystal growth furnace and carry out vacuum treatment until the vacuum degree in the furnace reaches 10 millitorr;

[0035] (3) Slowly fill the crystal growth furnace with HE-AR inert mixed gas with a volume ratio of HE and AR of 1:1.5 to remove impurities;

[0036] (4) Use a heater to start heating the crystal growth furnace for HEM crystal growth. The temperature in the furnace is always not lower than 2000°C. During the crystal growth process, continuously fill the HE-AR inert mixed gas until the crystal growth is completed.

[0037] The chemical fluid processing speed of the HE and AR inert mixed gas is 1 CFH.

Embodiment 3

[0039] A HEM crystal growth method under the protection of an inert gas, it comprises the following steps:

[0040] (1) Put the crystal into the crystal growth furnace;

[0041] (2) Seal the crystal growth furnace and carry out vacuum treatment until the vacuum degree in the furnace reaches 5 millitorr;

[0042] (3) Slowly fill the crystal growth furnace with HE-AR inert mixed gas with a volume ratio of HE and AR of 1:3 to remove impurities;

[0043] (4) Use a heater to start heating the crystal growth furnace for HEM crystal growth. The temperature in the furnace is always not lower than 2000°C. During the crystal growth process, continuously fill the HE-AR inert mixed gas until the crystal growth is completed.

[0044] The chemical fluid processing speed of the HE and AR inert mixed gas is 0.5 CFH.

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PUM

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Abstract

The invention discloses a method for growing an HEM crystal under the protection of an inert gas. The method comprises the following steps:(1) putting the crystal in a crystal growing furnace; (2) sealing the inside of the crystal growing furnace and carrying out a vacuum treatment until the vacuum degree in the furnace reaches 5 to 10 millitorr; (3) slowly filling a HE (helium)-AR(argon) inert mixing gas with the volume ratio of HE to AR of being 1: (1.5 to 3) into the crystal growing furnace and removing impurities; and (4) heating the crystal growing furnace by using a heater and enabling the HEM crystal to grow, wherein the temperature in the furnace is always not lower than 2000 DEGC; and the HE-AR inert mixing gas is continuously filled during the crystal growing process until the crystal growth is finished. The method has the beneficial effect of realizing the HEM crystal growth by utilizing the HE-AR inert mixing gas, so that the crystal growing effect is good; and the problem of helium supply in the international requirement is avoided. In addition, the production cost is saved; and the procurement risk is reduced.

Description

technical field [0001] The invention relates to a HEM crystal growth method under the protection of an inert gas, belonging to the technical field of crystal production. Background technique [0002] There are several ways to grow sapphire crystals: pulling method, Kyropoulos method, HEM, inverted film method, etc. Among them, the HEM method has gradually become the main method for large-scale sapphire growth in recent years. Helium is filled in the sapphire crystal growth furnace as a protective gas and to take away the impurity gas removed from the crystal growth and thermal field. It is a consumable, and because helium is a natural resource in the universe, it is also non-renewable. Scarce strategic resources have important uses in satellite spacecraft launch, missile weapon industry, airship and other aerostats, low-temperature superconductivity research, semiconductor production, nuclear magnetic resonance imaging, special metal smelting, and gas leak detection. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B27/00C30B29/20
Inventor 季泳张龚磊
Owner 贵阳嘉瑜光电科技咨询中心