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Thin-film solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., which can solve the problems of low photoelectric conversion efficiency

Inactive Publication Date: 2013-06-26
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0023] However, conventional pin junction thin-film solar cells have the problem of low photoelectric conversion efficiency.

Method used

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  • Thin-film solar cell and manufacturing method thereof
  • Thin-film solar cell and manufacturing method thereof
  • Thin-film solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0084] refer to figure 1 with figure 2 The thin-film solar cell of Embodiment 1 and its manufacturing method will be described. The thin-film solar cell of Embodiment 1 has a substrate-type structure.

[0085] figure 2 An outline of the structure of the thin-film solar cell according to Embodiment 1 is shown, including: a heat-resistant glass substrate 201; a tungsten (W) film 202 as a base metal; a laminate 206b; an ITO film 209; The laminated body 206b includes: an n-type Si diffusion layer 203b; an i-type Si film-forming layer 204b; and a p-type Si diffusion layer 205b.

[0086] In order to manufacture the thin film solar cell of Embodiment 1, first obtain figure 1 Laminate 206a is shown. Specifically, a heat-resistant glass substrate 201 having a thickness of about 400 μm to 1000 μm is put into a first vacuum chamber (not shown). On the glass substrate 201, a tungsten film 202 is formed as a base metal with a thickness of about 100 to 2000 nm by sputtering.

[008...

Embodiment approach 2

[0100] refer to image 3 with Figure 4 The thin-film solar cell of Embodiment 2 and its manufacturing method will be described. The thin-film solar cell of Embodiment 2 has a superstrate structure. exist image 3 with Figure 4 in, right with figure 1 with figure 2 The same reference numerals are used for the same structural elements, and explanations are omitted.

[0101] Figure 4 The outline of the structure of the thin-film solar cell of Embodiment 2 is shown. Except that the tungsten film 202 as the base metal is changed to an ITO film 209, and the ITO film 209 as the first surface electrode is changed to a W film 202, the structure of the thin-film solar cell in Embodiment 1 (see figure 2 )same.

[0102] In order to manufacture the thin-film solar cell of Embodiment 2, first obtain image 3 Laminate 206a is shown. It manufactures similarly to the laminated body 206a of Embodiment 1 except having formed the ITO film 209 (thickness about 100-2000 nm) instead...

Embodiment approach 3

[0106] refer to Figure 5 with Image 6 The thin-film solar cell of Embodiment 3 and its manufacturing method will be described. The thin-film solar cell of Embodiment 3 has a substrate-type structure. exist Figure 5 with Image 6 in, right with figure 1 with figure 2 The same reference numerals are used for the same structural elements, and explanations are omitted.

[0107] Image 6 An outline of the structure of the thin-film solar cell according to Embodiment 3 is shown, including: a heat-resistant glass substrate 201; a tungsten (W) film 202 as a base metal; a laminate 206f; an ITO film 209; and an Ag electrode 210. The laminated body 206b includes: a p-type Si diffusion layer 211b; an i-type Si film-forming layer 204b; and an n-type Si diffusion layer 212b.

[0108] In order to manufacture the thin film solar cell of Embodiment 3, first obtain Figure 5 Laminate 206e is shown. Specifically, a heat-resistant glass substrate 201 with a thickness of 400 to 1000...

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Abstract

The present invention aims to improve the conversion efficiency of a thin film solar cell constituted by a pin junction-type thin film layer. Specifically, a thin film solar cell including a laminate which includes first diffusion layer made of semiconductor having p-type or n-type conductivity, a film-forming layer made of semiconductor having lower conductivity than the first diffusion layer, and second diffusion layer made of semiconductor having different polarity from the film-forming layer inside, is provided. The first diffusion layer and the second diffusion layer have impurities distributed in the respective film-thickness directions with a concentration gradient. The impurity concentration nearby the surface of the first diffusion layer is higher than that nearby an interface between the first diffusion layer and the film-forming layer, and the impurity concentration nearby the surface of the second diffusion layer is higher than that nearby an interface between the second diffusion layer and the film-forming layer.

Description

technical field [0001] The present invention relates to a thin film solar cell and a manufacturing method thereof. Background technique [0002] Crystalline silicon solar cells account for approximately 90% of the solar cell market due to their high conversion efficiency. However, it will take 15 to 20 years for users to repay the input cost of crystalline silicon solar cells. Therefore, in order to reduce the material cost of silicon, which accounts for about 50% of the production cost, and to make the thickness of the silicon substrate as thin as possible, technical development of thin-film solar cells and their production methods is underway. [0003] Among such thin-film solar cells, there is known a thin-film solar cell in which silicon-centered solar cells are sequentially stacked using a thin-film process such as CVD (Chemical Vapor Deposition), sputtering, or vapor deposition. A thin-film solar cell formed by forming a desired semiconductor layer. The film thickne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/077H01L31/0352H01L31/0368H01L31/18
CPCY02E10/548H01L31/1804H01L31/1864H01L31/1872H01L31/202Y02E10/547H01L31/075Y02P70/50H01L31/065
Inventor 斋藤光央山西齐永井久雄奥村智洋中山一郎
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD