Fabrication of metal hard masks

A metal hard mask, hard mask technology, applied in metal material coating process, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve the problems of thermal budget, pattern distortion, etc., to improve thermal budget, Effects of Maintaining Device Performance and Ensuring High-k Integrity

Active Publication Date: 2016-02-24
TAIWAN SEMICON MFG CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, fabricating the hardmask under high residual stress can lead to pattern distortion, while releasing the stress in the hardmask requires a thermal budget

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication of metal hard masks
  • Fabrication of metal hard masks
  • Fabrication of metal hard masks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] It is understood that in order to implement the different components of the present invention, the following disclosure provides many different embodiments or examples. Specific examples of elements and settings described below are used to simplify the present disclosure. Of course, these are just examples and are not meant to be limiting. Furthermore, the first part formed on the second part in the following description may include an embodiment in which the first and second parts are formed in direct contact, or may include forming an additional part to be inserted into the first and second parts, So that the first and second components do not directly contact an embodiment. For simplicity and clarity, various components can be drawn in different sizes at will. In addition, some drawings have been simplified for clarity. Therefore, the drawings may not depict all components of a given apparatus (e.g., device) or method.

[0032] The accompanying drawings schematicall...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
Login to view more

Abstract

The present invention provides methods of manufacturing metal hard masks and metal hard masks manufactured by these methods. The method includes flowing at least one metal reactive gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactive gas includes a metal halide gas or a metal organic gas. The method further includes depositing a metal hard mask layer by CVD using at least one metal reactive gas.

Description

Technical field [0001] The present invention generally relates to the field of semiconductors, and more specifically, to the manufacture of metal hard masks. Background technique [0002] Hard masks are used in semiconductor processing to transfer patterns to substrates, especially as feature sizes gradually shrink. For decreasing geometric dimensions, metal hard masks can provide the required etch profile and critical dimension control. However, manufacturing a hard mask under high residual stress will cause pattern distortion, and releasing the stress in the hard mask requires a thermal budget. Summary of the invention [0003] The invention provides various advantageous embodiments. According to one embodiment, a method of manufacturing a metal hard mask includes flowing at least one metal reactive gas into a reaction chamber configured for chemical vapor deposition (CVD), wherein the at least one metal reactive gas includes, Metal halide gas or metal organic gas. The metho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033H01L21/02C23C16/44
CPCC23C16/08C23C16/34C23C16/44C23C16/56H01L21/0332H01L21/32051C23C16/04H01L21/02H01L21/0273H01L21/2056
Inventor 林思宏吴林荣杨琪铭林进祥
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap