Suspension grid transistor, manufacturing method and application method of suspension grid transistor and display drive circuit

Abstract

The invention relates to a suspension grid transistor, a manufacturing method and an application method of the suspension grid transistor and a display drive circuit. The suspension grid transistor comprises a substrate, a suspension grid electrode, a suspension source electrode, a suspension leakage electrode and a control grid electrode, wherein the suspension grid electrode, the suspension source electrode, the suspension leakage electrode and the control grid electrode are arranged on the substrate. The suspension grid transistor further comprises a first layer insulation thin film and a polycrystalline silicon thin film, wherein the first layer insulation thin film and the polycrystalline silicon thin film are sequentially arranged on the substrate. A channel region is formed in the middle of the polycrystalline silicon thin film, and the position of the channel region corresponds to the position of the suspension grid electrode. The suspension grid transistor has the advantages of being capable of adjusting thin film transistor (TFT) threshold voltage, and removing the possibility that in the process of production of a rear panel, due to the fact that the TFT threshold voltage is not accurate, a whole circuit does not work.

Description

technical field [0001] The present invention relates to the technical field of TFT (thin film transistor), in particular to a floating gate transistor based on a TFT manufacturing process, a manufacturing method, an application method, and a display driving circuit. Background technique [0002] The floating gate technology was proposed as early as the 1960s, but due to the limitation of the manufacturing technology at that time, it was not applied to the storage field until the 1980s. Today's EPROM, EEPROM, Flash memory, etc. all use floating gate technology. [0003] The term "floating gate" comes from a special type of MOS transistor. This transistor has a source 104, a drain 105, and two gates, one of which is electrically connected and is called a control gate 100, which is a gate in the general sense. There is also one without external leads, which is completely wrapped in two layers of SiO2 film 102, and is floating, so it is called floating gate 103, such as figur...

AI Technical Summary

Problems solved by technology

In the TFT industry, devices with storage functions are also required, but due to factors such as manufacturing process and demand, no devices with storage functions have been manufactured on glass substrates.

Images