Floating gate transistor and its manufacturing method, application method, and display driving circuit
A manufacturing method and transistor technology, applied in the direction of transistors, circuits, semiconductor devices, etc., can solve the problems of manufacturing devices with storage functions
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[0076] The structure and principle of the present invention will be described in detail below with reference to the accompanying drawings. The examples are only used to explain the present invention, and are not intended to limit the protection scope of the present invention.
[0077] like figure 2 and image 3 As shown, this embodiment provides a floating gate transistor, including a substrate 1, a floating gate 3, a source 4, a drain 5 and a control gate 6 disposed on the substrate 1, and further comprising:
[0078] A first insulating film 7 and a polysilicon film 8 are sequentially provided on the substrate 1 . A channel region 2 is formed on the polysilicon film 8 , and the position of the channel region 2 corresponds to the position of the floating gate 3 .
[0079] A second insulating film 9 and a third insulating film 10 are arranged on the polysilicon film 8 in sequence, and the floating gate 3 is arranged between the second insulating film 9 and the third insulatin...
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