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Circuit, for limiting high-side floating power supply low level undershoot, in floating gate drive chip

A floating power supply and driving chip technology, applied in logic circuits, electrical components, pulse technology, etc., can solve the problems of high-side floating power supply low level VS negative overshoot and other problems, and achieve the suppression of amplitude and duration, power consumption Minimal, latch-up prevention effect

Inactive Publication Date: 2013-08-07
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the existing high-side floating power low-level VS negative overshoot problem in the existing high-voltage integrated circuit (HVIC), and to provide a floating gate driver chip that suppresses the low-level negative overshoot of the high-side floating power supply. Chong circuit, the circuit involved is simple in structure and high in reliability

Method used

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  • Circuit, for limiting high-side floating power supply low level undershoot, in floating gate drive chip
  • Circuit, for limiting high-side floating power supply low level undershoot, in floating gate drive chip
  • Circuit, for limiting high-side floating power supply low level undershoot, in floating gate drive chip

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Embodiment Construction

[0016] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0017] figure 1 In order to be the basic structure of the floating gate driving chip and external devices in the prior art, the floating gate driving chip is provided with a high-side channel and a low-side channel, and logic circuits and driving circuits are respectively provided in the high-side and low-side channels.

[0018] figure 2 For the present invention, with figure 1 In comparison, the present invention improves the drive circuit in the high-side channel in the prior art, and adds a current detection and control circuit between the drive circuit in the improved high-side channel and the low-level VS of the high-side floating power supply , one input terminal of the driving circuit in the improved high-side channel is connected to the output terminal of the logic circuit, and the output terminal of the current detection and control...

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Abstract

The invention discloses a circuit, for limiting high-side floating power supply low level undershoot, in a floating gate drive chip. The floating gate drive chip comprises a high-side channel and a low-side channel, wherein a logic circuit and a drive circuit are disposed in the high-side channel and a logic circuit and a drive circuit are disposed in the low-side channel. The drive circuit in the conventional high-side channel is modified, a current detecting and control circuit is added between the modified drive circuit and a high-side floating power supply low level VS, one input end of the modified drive circuit is connected with an output end of the logic circuit, an output end of the current detecting and control circuit is connected with the other input end of the modified drive circuit, and an output end of the modified drive circuit is connected with a high-side output pin of the floating gate drive chip.

Description

technical field [0001] The invention relates to a floating gate drive chip, in particular to a circuit for suppressing low-level negative overshoot of a high-side floating power supply in the floating gate drive chip, and belongs to the field of high-voltage integrated circuit (HVIC) design. Background technique [0002] As an advanced high-voltage power switching device drive scheme, floating gate driver chips, as a structure in high-voltage integrated circuits (HVIC), are widely used in motor drives, inverters, switching power supplies, automotive electronics, lighting and other fields, and in daily life. and industrial development are closely linked. figure 1 Shown is the basic structure of the floating gate driver chip and external devices in the prior art. Its function is to use two channels of high and low sides to drive the high-voltage power switching devices with high power level and low side outside the chip (the upper and lower series in the figure Connected IGBT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/094
Inventor 祝靖孙国栋张允武孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV
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