Detection device and detection method for PECVD film forming hollowing in Si-based thin film battery

Abstract

The invention relates to a detection set and a detection method for PECVD film forming hollows in Si-based thin-film cells. Presently, detecting the area of thin film hollows by an SEM (scanning electron microscope) is difficult, and the SEM equipment suited to the size of the thin-film cells is highly expensive. Therefore, the detection set for PECVD film forming hollows in Si-based thin-film cells is disclosed. The detection set comprises a detection device, a circuit system and a display device used for displaying the area and number of PECVD film forming hollows in thin-film cells. The detection device comprises a probe set, a movement system, and a positioning system, wherein the movement system allows for X-axial reciprocating motion of the probe set and the positioning system allows for Y-axial reciprocating motion of the thin-film cells. The probe set and the circuit system form a closed loop. The display device is electrically connected with the output end of the circuit system. In addition, the invention further discloses a detection method for PECVD film forming hollows in Si-based thin-film cells. The detection set is reasonable in structure, low in cost and convenient to use and is applicable to detecting the number and area of thin film hollows.

Description

technical field [0001] The invention relates to the production field of Si-based thin film batteries, in particular to a detection device and a detection method for PECVD film forming hollowing in Si-based thin film batteries. Background technique [0002] In order to reduce environmental pollution and CO2 greenhouse gas emissions, the solar energy industry has become a strategic requirement of every country. At present, the products in the photovoltaic market are divided into crystalline silicon solar cells and thin-film solar cells. Compared with crystalline silicon solar cells, thin-film solar cells have the advantages of low price, low pollution, high flexibility, good weak light effect, and suitable for use in large areas. advantage. The Si / SiGe / Si triple stack structure deposited by PECVD is the power generation layer of the thin film battery, which is responsible for generating photogenerated carriers, which directly determines the open circuit voltage, short circuit...

AI Technical Summary

Problems solved by technology

[0004] At present, thin film hollowing can be measured by SEM (scanning electron microscope). SEM can accurately observe the size and position of the hollowing, but there are many hollowings at both ends of the thin film battery, and it is also difficult to test the hollowing area by SEM.

And the SEM test needs to be carried out under vacuum conditions, and because the SEM equipment for the size of the thin film battery is very expensive

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