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Light emitting diode structure and manufacturing method thereof

A technology of light-emitting diodes and light-emitting stacks, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems that input power cannot be converted into light, light is lost, and light cannot be effectively taken out.

Active Publication Date: 2017-12-01
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] But at present, the internal quantum efficiency of light-emitting diodes is about 50% to 80%, and about 20% to 50% of the input power cannot be converted into light.
When the light emitting diode is packaged, the light generated by part of the light emitting diode is reflected or diffused in the package, and finally absorbed by the electrode of the light emitting diode, resulting in light loss
In addition, because the electrodes arranged on the LED block the light path, the light generated by some LEDs cannot be effectively extracted, resulting in that the brightness cannot be improved.

Method used

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  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof

Examples

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Effect test

no. 1 example

[0031] Figure 2A and Figure 2B shows a high-brightness light-emitting diode structure according to a first embodiment of the present invention, wherein Figure 2B show Figure 2A The cross-sectional view of the dotted line AA' in the middle. Figure 2A It is a top view of the high-brightness light-emitting diode structure of the first embodiment, a plurality of semiconductor light-emitting stacks 2 are located on the substrate 8, and the second electrode 5 and the first electrode 7 are respectively located on the first side E1 and the second side of the substrate 8. Side E2, the first electrode extension part 6 and the second electrode extension part 4 are respectively connected to the first electrode 7 and the second electrode 5 and extend to both sides of each semiconductor light emitting stack 2, and are not directly connected to the semiconductor light emitting stack 2. ohmic contact.

[0032] Such as Figure 2B As shown, there is a second conductive layer 10 on the...

no. 2 example

[0039] Figure 3A and Figure 3B shows a high brightness light emitting diode structure according to a second embodiment of the present invention, wherein Figure 3B show Figure 3A The cross-sectional view of the dotted line AA' in the middle. The difference between the second embodiment and the first embodiment is that the first electrode extension 6 located in the groove 18 is located on the second electrode extension 4, overlaps the second electrode extension 4, and the first electrode extension 6 and the second electrode extension 4 are stacked with a height lower than that of the adjacent semiconductor light emitting stack 2 .

no. 3 example

[0041] Figure 4A and Figure 4B shows a high-brightness light-emitting diode structure according to a third embodiment of the present invention, wherein Figure 4A It is the top view of the high brightness light emitting diode structure of the third embodiment, Figure 4B show Figure 4A The cross-sectional view of the dotted line AA' in the middle. A plurality of semiconductor light-emitting stacks 2 are placed on the substrate 8 and divided into a first region 201 and a second region 202, wherein the plurality of semiconductor light-emitting stacks 2 in the first region 201 are connected in parallel, and are connected to the second region 202 through the serial electrode 61. The semiconductor light emitting stacks 2 are connected in series, wherein the series electrodes 61 are arranged around the semiconductor light emitting stacks 2 and are not in direct ohmic contact with the semiconductor light emitting stacks 2 . The second electrode 5 and the first electrode 7 are ...

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Abstract

The invention discloses a light-emitting diode structure and a manufacturing method thereof. The light-emitting diode structure includes a substrate, and one or more semiconductor light-emitting stacks are located on the substrate. The semiconductor light-emitting stack includes a first semiconductor layer, a second semiconductor layer and the first semiconductor layer with different electrical properties, and a light-emitting layer. The layer is between the first semiconductor layer and the second semiconductor layer, a first electrode is on the substrate, is separated from the semiconductor light-emitting stack, and is electrically connected to the first semiconductor layer, and a second electrode is on the substrate and is electrically connected to the first semiconductor layer. The semiconductor light-emitting stack is separated and electrically connected to the second semiconductor layer, wherein the height of the first electrode and the second electrode does not exceed the height of the semiconductor light-emitting stack.

Description

technical field [0001] The invention relates to a high-brightness light-emitting diode structure and a manufacturing method thereof. Background technique [0002] The light-emitting diode (LED) is different from the traditional light source in its light-emitting principle and structure. It has the advantages of low power consumption, long component life, no need to warm up the lamp, and fast response speed. It is easy to make extremely small or arrayed components according to the application requirements, and it is widely used in the market. For example, optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. [0003] Common array light emitting diodes, such as figure 1 As shown, a substrate 8 is included, and a plurality of light-emitting stacks 2 are disposed on the substrate 8 , including a second semiconductor layer 26 , a light-emitting layer 24 , and a first semiconductor layer 22 . If...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/10H01L33/00H01L27/15
CPCH01L27/15H01L33/00H01L33/10H01L33/38
Inventor 许嘉良欧震涂均祥郭得山柯丁嘉邱柏顺
Owner EPISTAR CORP