Unlock instant, AI-driven research and patent intelligence for your innovation.

Photovoltaic device and manufacturing method thereof, photovoltaic module

A photovoltaic device and light-receiving surface technology, which is applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of increased recombination speed, decreased photovoltaic power, and decreased semiconductor crystal quality, and achieves alleviating constraints, high photoelectricity, etc. Conversion efficiency and cost reduction effect

Inactive Publication Date: 2016-01-27
MITSUBISHI ELECTRIC CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the doping concentration is too high, the quality of the crystal as a semiconductor will be greatly reduced, and the recombination speed will increase, so the photovoltaic power will be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photovoltaic device and manufacturing method thereof, photovoltaic module
  • Photovoltaic device and manufacturing method thereof, photovoltaic module
  • Photovoltaic device and manufacturing method thereof, photovoltaic module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0057] Below, refer to Figure 1-1 to Figure 1-10 as well as Figure 2-1 to Figure 2-10 , while following the manufacturing process, the embodiment of the present invention will be described. Figure 1-1 to Figure 1-10 It is a sectional view showing an example of a method of manufacturing a photovoltaic device according to an embodiment of the present invention. Figure 2-1 to Figure 2-10 It is a perspective view showing an example of a method of manufacturing a photovoltaic device according to an embodiment of the present invention. Figure 2-1 to Figure 2-10 The steps shown correspond to the Figure 1-1 to Figure 1-10 the steps shown.

[0058] First, as a semiconductor substrate, for example, a p-type polysilicon substrate (hereinafter referred to as a p-type silicon substrate 101 a ) that is most widely used as a commercial solar cell is prepared ( Picture 1-1 , Figure 2-1 ).

[0059] The p-type silicon substrate 101a is produced by cutting and slicing a single-cryst...

example 1

[0106] In the case of grid electrode spacing = 1 mm, process limit for patterning of high-concentration n-type diffusion layer = 100 μm (0.1 mm):

[0107] (0.1mm×0.1mm) / (1mm×1mm)=0.01(=1%)

[0108] (Example 2 of lower limit value)

[0109] In the case of grid electrode spacing = 2 mm, process limit for patterning of high-concentration n-type diffusion layer = 100 μm (0.1 mm):

[0110] (0.1mm×0.1mm) / (2mm×2mm)=0.0025 (=0.25%)

[0111] In addition, in addition to the discontinuous shape, as the shape of the high-concentration n-type diffusion layer, a "wavy shape" that is continuous in the direction perpendicular to the longitudinal direction of the grid electrode in the light-receiving surface of the photovoltaic device and has a variable width is also proposed. "shape( Figure 9 ). Figure 9 It is a plan view schematically showing an example of the pattern of the high-concentration n-type diffusion layer 102a in this embodiment. exist Figure 9 middle, Figure 9 (a) show...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Equipped with: a silicon substrate 101 of the first conductivity type, which has an impurity diffusion layer 102 diffused with an impurity element of the second conductivity type on one side; A plurality of grid electrodes arranged side by side at regular intervals on one side; and a back side electrode 104 formed on the other side of the silicon substrate 101, and the impurity diffusion layer 102 has a first impurity diffusion layer containing an impurity element at a first concentration. 102a, and a second impurity diffusion layer 102b containing an impurity element at a second concentration lower than the first concentration, for the first impurity diffusion layer 102a, an The direction perpendicular to the longitudinal direction of the grid electrode is defined as the longitudinal direction, and the area ratio of the first impurity diffusion layer 102a to the strip-shaped region is 50% or less, wherein the length direction of the grid electrode in the first impurity diffusion layer 102a is The maximum width in the parallel direction is equal to the width of the strip-shaped region, and the length of the strip-shaped region in the longitudinal direction is the same as the length of the first impurity diffusion layer 102a in the longitudinal direction.

Description

technical field [0001] The invention relates to a photovoltaic device, a manufacturing method thereof, and a photovoltaic module. Background technique [0002] In order to improve the performance of photovoltaic devices such as solar cells, there are three points: efficiently taking in sunlight into the device, converting the taken in light energy into electrical energy through high current-voltage characteristics, and efficiently taking out the converted light energy to the outside. is important. In addition, it is also important to be able to maintain long-term reliability of the output for a long period of time when considering the actual use as well. [0003] Generally, in order to manufacture a photovoltaic device, impurities of a conductivity type opposite to that of the substrate are diffused to the surface of the substrate to form an impurity diffusion layer (hereinafter referred to as a diffusion layer) on the surface of the substrate to form a PN junction. [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0236H01L31/0352H01L31/068H01L31/18
CPCH01L31/022425H01L31/02363H01L31/03529H01L31/068H01L31/1804Y02E10/547Y02P70/50H01L31/04H01L31/18
Inventor 滨本哲
Owner MITSUBISHI ELECTRIC CORP