Resistive memory device and method of fabricating the same

Abstract

A resistive memory device according to an embodiment includes a plurality of word lines extended and formed in a first direction; a global word line signal line extended substantially in the first direction, formed substantially in a layer substantially identical with the word lines, and interposed substantially between a designated number of the word lines; a plurality of bit lines extended and formed in a second direction tilted at an angle with the first direction; a plurality of normal cells connected substantially between the word line and the bit line; and a plurality of dummy cells connected substantially between the global word line signal line and the bit line.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0047464 filed with the Korean Intellectual Property Office on May 4, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention generally relates to a semiconductor device, a resistive memory device and a manufacturing method thereof. Background technique [0004] As known in the art, a semiconductor memory array includes a plurality of unit memory cells. Also, when accessing a specific unit memory cell for operating a semiconductor memory device, an external address is decoded and a related word line and bit line are enabled. [0005] Various nonvolatile memory devices for replacing existing flash memories have been and are being researched. Typical examples of these nonvolatile memory devices may include Magnetic Random Access Memory (MRAM), Phase Change Random Access Memory (PRAM...

AI Technical Summary

Problems solved by technology

[0022] This orientation leads to a word line bouncing phenomenon that changes the distribution of word line voltage levels, and as a result, cell operation characteristics deteriorate

Images