Overcurrent detection and protection circuit

A protection circuit and over-current detection technology, which is applied in the direction of protection against over-current, can solve problems such as MOSFET damage of driving devices, and achieve the effect of circuit protection
CN103390877AActive Publication Date: 2013-11-13BEIJING JINGWEI HIRAIN TECH CO INC

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING JINGWEI HIRAIN TECH CO INC
Publication Date
2013-11-13

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention provides an overcurrent detection and protection circuit which comprises a driving unit, a sampling unit, a signal generation unit, a closing unit and a maintaining unit, wherein the driving unit is used for driving a load circuit; the sampling unit is used for collecting currents in a loop of the load circuit; the signal generation unit is used for generating an overcurrent signal when the currents in the loop of the load circuit are larger than a preset value; the closing unit is used for closing the driving unit when the overcurrent signal is received; and the maintaining unit is used for maintaining a close state of the driving unit until a control signal sent by an MCU for starting the driving unit is received. According to the overcurrent detection and protection circuit, when the currents in the loop of the load circuit are detected to be larger than the preset value, the driving unit can be closed rapidly, the closed state is locked, and the circuit is protected.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of overcurrent protection, in particular to an overcurrent detection and protection circuit. Background technique

[0002] Power tubes such as metal-oxide-semiconductor-field-effect transistor MOSFETs are used in drive circuits due to their many advantages such as large input impedance and small conduction voltage drop. However, when the current flowing through the MOSFET is too large, due to the existence of its internal resistance, it will cause excessive power and damage the device.

[0003] To address the above problems, the prior art usually adopts the following solution: the current detection circuit detects the current flowing through the MOSFET, and when the current detected by the current detection circuit exceeds a set value, an overcurrent signal is sent to the Micro Control Unit (MCU). signal, the MCU turns off the MOSFET after receiving the overcurrent signal.

[0004] The inventor found in th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More