Overcurrent detection and protection circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING JINGWEI HIRAIN TECH CO INC
- Publication Date
- 2013-11-13
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Abstract
Description
technical field
[0001] The invention relates to the technical field of overcurrent protection, in particular to an overcurrent detection and protection circuit. Background technique
[0002] Power tubes such as metal-oxide-semiconductor-field-effect transistor MOSFETs are used in drive circuits due to their many advantages such as large input impedance and small conduction voltage drop. However, when the current flowing through the MOSFET is too large, due to the existence of its internal resistance, it will cause excessive power and damage the device.
[0003] To address the above problems, the prior art usually adopts the following solution: the current detection circuit detects the current flowing through the MOSFET, and when the current detected by the current detection circuit exceeds a set value, an overcurrent signal is sent to the Micro Control Unit (MCU). signal, the MCU turns off the MOSFET after receiving the overcurrent signal.
[0004] The inventor found in th...