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Method of forming a bipolar transistor

A bipolar transistor, N-type technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of large collector current and improved performance

Active Publication Date: 2016-12-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The performance of the bipolar transistor formed by the prior art needs to be further improved

Method used

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  • Method of forming a bipolar transistor
  • Method of forming a bipolar transistor
  • Method of forming a bipolar transistor

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Embodiment Construction

[0029] As mentioned in the background art, the performance of existing bipolar transistors still needs to be further improved.

[0030] Research has found that in the existing bipolar transistors, after the base is formed and before the emitter is formed on the surface of the base, the surface of the base is naturally oxidized to form an oxide layer. The oxide layer is located between the emitter and base interfaces of the bipolar transistor, which will increase the emitter resistance of the bipolar transistor, thereby reducing the emitter current of the bipolar transistor and affecting the performance of the bipolar transistor.

[0031] Moreover, the prior art cannot remove the oxide layer at present, even after the base is formed, the surface of the base is cleaned to remove the oxide layer on the surface, but in the process of forming the emitter later, due to the process In the process of replacing the reaction chamber, the surface of the base electrode will still be oxidi...

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Abstract

The invention discloses a forming method for a bipolar transistor. The method comprises the following steps of providing a semiconductor substrate; forming an N-type collector electrode in the semiconductor substrate; forming a P-type base electrode on the surface of the N-type collector electrode, wherein an oxidation layer formed by natural oxidation is arranged on the surface of the P-type base electrode; forming an N-type emitting electrode on the P-type base electrode; carrying out annealing treatment on the P-type base electrode and the N-type emitting electrode to reduce the resistance of the emitting electrode. According to the forming method for the bipolar transistor, the resistance of the emitting electrode can be reduced and the performances of the bipolar transistor are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a bipolar transistor. Background technique [0002] Bipolar transistors are one of the commonly used device structures constituting modern large-scale integrated circuits, with their fast operating speed, low saturation voltage drop, high current density and low production cost. [0003] Please refer to Figure 1 to Figure 4 It is a schematic diagram of a method for forming a bipolar transistor in the prior art. [0004] Please refer to figure 1 A semiconductor substrate 10 is provided, and an N-type buried layer 11 and a collector electrode 12 located in the N-type buried layer 11 are formed in the semiconductor substrate 10 . [0005] The material of the semiconductor substrate 10 may be semiconductor materials such as silicon or silicon germanium. Implanting and diffusing first N-type ions into the semiconductor substrate 10 to form the N-type b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331
Inventor 林益梅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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