A kind of thin film transistor and its manufacturing method, array substrate and display device
A technology of thin film transistors and array substrates, which is applied in the fields of array substrates and display devices, thin film transistors and manufacturing methods thereof, and can solve the problems that the on-state current of TFTs cannot be too large, so as to increase the on-state current, improve characteristics, and reduce the gap The effect of track length
Active Publication Date: 2016-01-20
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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Problems solved by technology
The channel length of the existing TFT is generally at least 3-4um, which is limited by the existing manufacturing process, so the on-state current of the TFT cannot be too large
Method used
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[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
[0032] An embodiment of the present invention provides a thin film transistor, including a gate, a gate insulating layer, an active layer, and a first electrode and a second electrode insulated from each other arranged on a base substrate; along a direction perpendicular to the base substrate , the first electrode is arranged on the side of the active layer close to the substrate, the second electrode is arranged on the side of the active layer away from the substrate, and the first electrode and the second electrode are connected to The active layer is in contact, the gate is set on the same layer as the first electrode, and the gate is insulated from the first elect...
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Provided are a thin film transistor, a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a gate electrode (31), a gate insulating layer (7), an active layer (8), a first electrode and a second electrode, wherein the gate electrode (31), the gate insulating layer (7) and the active layer (8) are arranged on a substrate (1) and the first electrode and the second electrode are mutually insulated. Along the direction perpendicular to the substrate (1), the first electrode is arranged on one side, close to the substrate (1), of the active layer (8), the second electrode is arranged on one side, away from the substrate (1), of the active layer (8), and the first electrode and the second electrode are in contact with the active layer (8).
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. Background technique [0002] An existing liquid crystal display panel includes an array substrate, a color filter substrate, and liquid crystals arranged between the array substrate and the color filter substrate. Such as figure 1 As shown, the array substrate in the liquid crystal display includes: a base substrate 1 and a plurality of cross-arranged gate lines 2 and data lines 4, wherein the gate lines 2 and data lines 4 form a plurality of pixel units, and each pixel unit is correspondingly provided with A thin film transistor 3 that functions as a switch. refer to figure 2 As shown in the cross-sectional view of the thin film transistor, the thin film transistor 3 includes: a gate 31 disposed on the substrate 1, a gate insulating layer 7, an active layer 8, and drain elec...
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IPC IPC(8): H01L29/786H01L29/10H01L21/336
CPCH01L29/66742H01L27/1222H01L29/41733H01L29/78642H01L29/78696
Inventor 张文余谢振宇田宗民李婧
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD