An Ion Implanter for Reducing Grape Ball Defects in Wafers

Abstract

The invention relates to an ion implanter reducing grape-shaped defects of wafers. The ion implanter comprises a wafer preloading cavity, a transmission cavity and a process chamber, wherein the wafer preloading cavity, the transmission cavity and the process chamber are sequentially connected, the transmission cavity is a rectangular cavity, two mechanical arms are arranged at the bottom of the transmission cavity, and a metal plate is arranged on a flat plate at the bottom of the transmission cavity and is provided with a plurality of through holes. The metal plate with the through holes is arranged on the flat plate in the position, where the mechanical arms are not arranged, of the bottom of the cavity of the transmission cavity, in the moving process of harmful particles, the harmful particles can easily drop into the through holes of the metal plate without sliding to the waters, and therefore the number of harmful particles can be effectively reduced, the grape-shaped defects and burdens of equipment engineers are reduced, implanter maintenance cycle is prolonged, and production efficiency is obviously improved.

Description

technical field [0001] The invention relates to an ion implanter, in particular to an ion implanter for reducing grape-shaped defects of wafers. Background technique [0002] After the ion implantation of the wafer to remove the photoresist, small grape-shaped particles will be left behind. After inspection, the source of its generation is that large-sized particles fall on the surface of the wafer during the ion implantation process. It cannot be completely removed during the photoresist removal process. Large-sized particles are mainly produced by the graphite plate in the ion beam movement channel of the ion implanter. They are brought by the ion beam to the process chamber and the transfer chamber, and finally accumulate in a large amount in the wafer loading chamber. As the loading chamber Inflating and pumping, the particles will fall on the surface of the wafer, and finally cause grape-shaped defects on the wafer. The product will have grape-shaped defects during th...

AI Technical Summary

Problems solved by technology

Large-sized particles are mainly produced by the graphite plate in the ion beam movement channel of the ion implanter. They are brought to the process chamber and the transfer chamber by the ion beam, and finally accumulate in a large amount in the wafer loading chamber. As the loading chamber Inflating and pumping air, the particles will fall on the surface of the wafer, and finally cause grape-shaped defects on the wafer

The product will have grape-shaped defects during the ion implantation process. In order to reduce this defect, equipment engineers must spend more time cleaning the process chamber, transfer chamber and wafer loading during the maintenance process of the ion implanter. cavity, and this kind of maintenance needs to be performed every two weeks. The particle number curve of the ion implanter shows that the particle number has been hovering near the control line, which will inevitably reduce the production efficiency of the implanter.

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