Semiconductor Substrate Processing System

Abstract

The present invention provides apparatus for processing substrates. In some embodiments, the processing system may include a first transfer chamber and a first processing chamber coupled to the transfer chamber, the processing chamber further comprising: a substrate support for supporting a substrate located in the processing chamber a processing surface of a substrate within the chamber; an injector disposed on a first side of the substrate support and having a first flow path providing a first processing gas and a second processing gas providing a second processing gas independent of the first processing gas two flow paths, wherein an injector provides the first processing gas and the second processing gas throughout the processing surface of the substrate; a showerhead, the showerhead is positioned above the substrate support to provide the first processing gas to the processing surface; and An exhaust port is positioned to the second side of the substrate support opposite the injector to exhaust the first process gas and the second process gas from the processing chamber.

Description

technical field [0001] Embodiments of the invention generally relate to a substrate processing system. Background technique [0002] As the critical dimensions of complementary metal-oxide-semiconductor (CMOS) devices continue to shrink, new materials need to be incorporated into CMOS architectures to improve energy efficiency and / or increase speed. One such group of materials are III-V materials, which may be used, for example, in channels of transistor devices. Unfortunately, current processing equipment and methods fail to produce materials with suitable material qualities such as low defect density, compositional control, high purity, morphology, in-wafer uniformity, and run to run Reproducibility) III-V membranes. Additionally, due to compatibility issues, current processing equipment for III-V materials is not integrated with other CMOS device processing equipment, such as processing chambers, for example in a cluster tool, to facilitate high-k ( high-k) dielectric ...

AI Technical Summary

Problems solved by technology

Unfortunately, current processing equipment and methods fail to produce materials with suitable material qualities such as low defect density, compositional control, high purity, morphology, in-wafer uniformity, and run to run Reproducibility) III-V membranes

Additionally, due to compatibility issues, current processing equipment for III-V materials is not integrated with other CMOS device processing equipment, such as processing chambers, for example in a cluster tool, to facilitate high-k ( high-k) dielectric pre-cleaning, annealing and / or deposition

These compatibility issues can be, for example, small substrate size, low III-V film purity or quality, and / or low chamber durability

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