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Linear amplifier arrangement for high-frequency signals

A linear amplifier and high-frequency signal technology, which is applied in the direction of high-frequency amplifiers, amplifiers, power amplifiers, etc., can solve problems such as insufficient linearity of broadband signals

Inactive Publication Date: 2014-01-08
RWTH AACHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Again, it must be borne in mind in such methods that the linearity for wideband signals is insufficient

Method used

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  • Linear amplifier arrangement for high-frequency signals
  • Linear amplifier arrangement for high-frequency signals
  • Linear amplifier arrangement for high-frequency signals

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] exist figure 1 A first embodiment of the invention is shown in .

[0031] In practice, the amplifier for high-frequency signals has RF for receiving high-frequency signals to be amplified in The signal input terminal IN, the high-frequency signal can come from a suitable source. The signal input terminal IN and the first amplifying device Mn 1 , Mn 2 connected to amplify the high-frequency signal to be amplified.

[0032] in implementation, figure 1 and 2 (representing other technologies) shows the MOS transistor Mn 1 , Mn 2 , but the invention is not limited to this technique.

[0033] For example, the transistors can also be designed as bipolar transistors or HBT or HEMT transistors or amplifier tubes. Depending on the technology used, this first amplifying means is connected as a drain amplifying circuit or a source follower circuit or similar.

[0034] In practice, the signal input terminal IN is connected to the second amplification device GB. The second...

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PUM

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Abstract

The invention relates to an amplifier arrangement for high-frequency signals. Said amplifier arrangement comprises a signal input (IN) for receiving high-frequency signals (RFin) that are to be amplified, a first amplifier device (Mn1, Mn2) that amplifies the high-frequency signals that are to be amplified, the first amplifier device being a drain circuit, a source follower circuit or a similar device, an additional amplifier device (GB; Mn3, Mn4, Mn5, Mn6) which is arranged in parallel to the first amplifier device (Mn1, Mn2) and amplifies the high-frequency signals that are to be amplified, and a signal output (OUT) for outputting the high-frequency signals (RFout) amplified by the first and the additional amplifier device (GB; Mn3, Mn4, Mn5, Mn6).

Description

technical field [0001] The invention relates to a high-frequency signal linear amplifier. Background technique [0002] Amplifiers for high frequency signals (radio frequency RF) are often also referred to as power amplifiers (RF PAs). [0003] Such amplifiers are in many ways the most demanding circuits in today's transmitters, especially in integrated transmitters. [0004] Efficiency, linearity and noiselessness are the focus here and are therefore factors that must be considered individually or in combination. Especially in (broadband) wireless communication systems, such as 3rd and 4th generation wireless communication systems, these requirements are a huge problem for the design of amplifiers. [0005] This has led to a long-standing research field in order to provide integrated amplifiers in integrated transmitters. This field of research has been advanced by the unrivaled integration possibilities of digital, analog and high-frequency components in CMOS technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/189H03F3/21
CPCH03F3/211H03F3/195H03F2200/541H03F3/19H03F2203/45731H03F3/68H03F2203/45562H03F3/45179H03F2203/45352H03F2203/21106H03F3/245H03F2200/39H03F3/189H03F3/21
Inventor 艾哈迈德·阿里夫雷纳托·内格拉
Owner RWTH AACHEN UNIV