Low threshold voltage metal oxide semiconductor

Abstract

A low threshold voltage metal oxide semiconductor is provided. The semiconductor device includes a source region disposed with a semiconductor substrate; a drain region disposed with the semiconductor substrate; a gate region disposed onto the semiconductor substrate and positioned between the source region and the drain region. The semiconductor device also includes a gate oxide region disposed onto the semiconductor substrate in contact with the gate region and a well region implanted onto the semiconductor substrate and under the gate region and the gate oxide region. The gate oxide region has a lower outer edge portion that contacts the well region.

Description

technical field [0001] The present disclosure generally relates to metal oxide semiconductor field effect transistors (MOSFETs). More specifically, it relates to a low-threshold voltage split-gate high-performance laterally diffused metal oxide semiconductor (LDMOS). Background technique [0002] Silicon semiconductor processes have highly complex operations for fabricating integrated circuits. As manufacturing process technology continues to advance, the core and IO operating voltages of integrated circuits have been reduced. However, the operating voltage of the auxiliary device remains unchanged. Auxiliary devices include devices for integration with integrated circuits. For example, an auxiliary device may be any device coupled to an integrated circuit, such as a printer, scanner, disk drive, tape drive, microphone, speaker, or camera. [0003] An integrated circuit may comprise: an array of interconnected active and passive elements, for example, transistors, resist...

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Problems solved by technology

Working above the breakdown voltage for a long time reduces the lifetime of the transistor

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