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Potassium-doped bismuth-antimony system, namely bi85sb15-xkx low temperature thermoelectric material and preparation method thereof

A technology of bi85sb15-xkx and thermoelectric materials, applied in the field of Bi85Sb15-xKx low-temperature thermoelectric materials and their preparation, and semiconductor materials for thermoelectric refrigerators, can solve the problems of poor mechanical processing performance, high cost, and long single crystal preparation cycle, and achieve Excellent thermoelectric performance, simple manufacturing process, easy to popularize and apply

Inactive Publication Date: 2016-08-10
ZUNYI NORMAL COLLEGE
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At 80 K, its figure of merit can reach 6.5×10 -3 K -1 . Both Bi and Sb are semi-metallic materials with the same rhombohedral crystal structure and similar lattice parameters. The physical properties of Bi-Sb alloys are related to the content of Sb. At 01-x Sb x The alloy behaves as a semi-metal, it is an n-type semiconductor at 0.070.22. However, the preparation cycle of single crystal is long, the machining performance is relatively poor, and the cost is high, which is not conducive to large-scale industrial production
It can be seen that there is a lack of a thermoelectric material with high mechanical strength and good performance in the low temperature range in the prior art

Method used

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Embodiment Construction

[0019] Embodiments of the present invention are achieved through the following technical solutions:

[0020] Bi provided by the present invention 85 Sb 15-x K x The thermoelectric material, wherein x represents any number from 1 to 4, is produced by mechanical alloying plus plasma sintering. Its chemical raw materials are pure bismuth, antimony, potassium elemental elements and high-purity argon.

[0021] Its preparation method comprises the following steps:

[0022] 1) Weigh metal bismuth, antimony and potassium according to the mass ratio in the chemical formula, put them into a quartz tube, vacuumize, seal the tube, sinter at a temperature of 600 degrees for 10 hours, then mechanically pulverize the sintered block, put it into In a mechanical ball mill jar, the vacuum degree is 2×10 -3 Pa filled with pure argon, ball milled for 50 hours;

[0023] 2) Put the powder after mechanical ball milling into a carbon mold with a diameter of 12mm, and sinter it by plasma spark, ...

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Abstract

Potassium mixed with bismuth-antimony system, namely Bi 85 Sb 15‑x K x A low-temperature thermoelectric material and a preparation method thereof, wherein x represents any value between 1-4, and the preparation method is to prepare 5N Bi, Sb and K according to a stoichiometric ratio, and adopt a process of mechanical alloying and plasma spark sintering; This material has excellent thermoelectric properties near 200K. The material has high mechanical strength, good thermoelectric potential and electrical conductivity, and has high quality at low temperature. The material has stable performance, simple manufacturing process, and low cost. Easy to promote applications.

Description

field of invention [0001] The invention relates to the field of thermoelectric materials, in particular to a Bi 85 Sb 15-x K x A low-temperature thermoelectric material and a preparation method thereof, which are applied to a semiconductor material of a thermoelectric cooler. Background technique [0002] Rapid economic growth has made energy and environmental issues the most severe challenge facing mankind in the new century. The development of environmentally friendly and clean energy technologies is an important basis for maintaining the sustainable and rapid development of national economy and social production. The main areas of semiconductor thermoelectric materials include: thermoelectric power generation devices, Peltier refrigeration devices and temperature sensors. Usually, the figure of merit parameter Z is used to describe the efficiency of thermoelectric refrigeration, Z=α2σ / λ, α is the thermoelectric coefficient, σ is the electrical conductivity of the mater...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/18H01L35/34
Inventor 宋春梅李来风
Owner ZUNYI NORMAL COLLEGE