Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spatial superposition coupling high power diode laser stack system

A space coupling, semiconductor technology, applied in the laser field, can solve problems such as complex process, achieve the effect of simple and compact structure, easy installation and debugging, and improve service life

Inactive Publication Date: 2016-02-10
NORTHWEST UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Effectively solves the complexity problem of the existing semiconductor laser technology, and outputs high-power strip-shaped uniform spot

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spatial superposition coupling high power diode laser stack system
  • Spatial superposition coupling high power diode laser stack system
  • Spatial superposition coupling high power diode laser stack system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0045] Following the technical solution of the present invention, the spatially superimposed and coupled high-power semiconductor laser stack system of this embodiment includes a first semiconductor laser stack 1, a second semiconductor laser stack 2, a first fast-axis collimating lens group 3, a second Two fast-axis collimating lens groups 4, the first slow-axis collimating lens array group 5, the second slow-axis collimating lens array group 6, periodic space coupling mirror 7, slow-axis beam expander system 8, focusing mirror 9 , Polarizer 11, quarter wave plate 12 and light barrier 13. in:

[0046] The first semiconductor laser stack 1 and the second semiconductor laser stack 2 are the same, and they all adopt a 3000-watt stack formed by superimposing 25 semiconductor laser bars with a 976nm and a power of 120W along the fast axis direction. The total power of the first semiconductor laser stack 1 and the second semiconductor laser stack 2 is 6000 watts. Such as image ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a system for spatially stacking high-power semiconductor laser stacks, comprising a first semiconductor laser stack and a second semiconductor laser stack, both of which are composed of a plurality of semiconductor laser stacks Bars are superimposed along the fast axis direction, and the two stacks contain the same number of bars; they also include the first fast axis collimating lens group, the second fast axis collimating lens group, and the first slow axis collimating lens array Array group, second slow-axis collimating lens array group, periodic space coupling mirror, slow-axis beam expander system, and focusing mirror; the two-way laser stack in this system is spatially superimposed through the periodic space coupling mirror to output high Power laser, beam collimation is realized by fast axis collimating lens and slow axis collimating lens array, which maintains high brightness and linear polarization characteristics, and at the same time, a feedback optical isolation system is added to protect internal components. It effectively solves the complexity problem of the existing semiconductor laser process and outputs a high-power strip-shaped uniform light spot.

Description

technical field [0001] The invention belongs to the technical field of lasers, and in particular relates to a spatially superimposed and coupled high-power semiconductor laser array system. Background technique [0002] Due to high brightness, high power density, small heat action area, short material processing time, fast processing speed, non-contact processing, no "tool" wear, no "cutting force" acting on the workpiece, the laser can be used for various metals and non-metals. Processing, especially materials with high hardness, high brittleness and high melting point and CNC system to form a laser processing center, the heat-affected zone is small, the deformation of the workpiece is small, the follow-up processing is small, the production efficiency is high, and the processing quality is stable and reliable, which solves the problems that many conventional methods cannot The problems solved have greatly improved work efficiency and processing quality. At present, the man...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/40H01S5/06
Inventor 王春白晋涛任兆玉冯晓强曹勇王思原张伯阳
Owner NORTHWEST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com