Five-level voltage source type conversion device

Abstract

The invention discloses a five-level voltage source type conversion device, and belongs to the field of power electronic conversion devices. The five-level voltage source type conversion device comprises a capacitor C1, a capacitor C2, a capacitor Cph, a first terminal (1), a second terminal (2), a third terminal (3), a fourth terminal (4), and twelve insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12. Withstand voltage born by all of the insulated gate bipolar transistors in the five-level voltage source type conversion device is the same, insulated gate bipolar transistors of the same type can be selected when the five-level voltage source type conversion device is used, the number of used capacitors is small, and a clamping diode is not required. The five-level voltage source type conversion device is simple in structure and flexile to control.

Description

technical field [0001] The invention relates to a five-level voltage source conversion device, which belongs to the field of power electronic conversion devices. Background technique [0002] In recent years, with the comprehensive development of power electronic technology and control technology, power electronic devices have been widely used, and people's requirements for high power, high voltage resistance and low harmonic disturbance of power electronic devices are getting higher and higher. The multi-level conversion device has the advantages of large power, low switching frequency, small output harmonics, fast dynamic response, good electromagnetic compatibility, etc., and can make power electronic devices with low withstand voltage values ​​reliably applied to high-voltage and high-power fields, and Effectively reduce the high-order harmonics generated by pulse width modulation, referred to as PWM control. However, due to the large number of diodes in the known diode...

AI Technical Summary

Problems solved by technology

However, due to the large number of diodes in the known diode-clamped five-level conversion device, the complex control of the capacitor flying-type five-level conversion device, and the need for independent DC sources and other five power supplies for the H-bridge cascaded five-level conversion device. There are inherent shortcomings in all level conversion devices, which inhibit the promotion and use of five-level conversion devices in practice.

[0003] The factor of voltage equalization must also be taken into account in the practical application of the five-level transposition transposition. Different types of insulated gate bipolar transistors have different internal parasitic inductances and parasitic capacitances, resulting in two different types of insulated gate bipolar transistors connected in series. Different voltages at both ends of the IGBT may eventually lead to damage to the IGBT, so different types of IGBTs cannot be used in series; at the same time, when designing and installing, due to different types of IGBTs Transistors vary in size, so in practice they cannot be mixed

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