A kind of aspherical ultraviolet lithography objective lens

A technology of ultraviolet light and aspheric surface, which is applied in the field of projection optics, can solve the problems of material type limitation, achieve good imaging characteristics, reduce the difficulty of assembly and integration, and achieve the effect of simple and compact system structure
CN103616757BInactive Publication Date: 2016-01-20INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Publication Date
2016-01-20
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides an aspheric ultraviolet photoetching objective lens which is used for imaging an image of an object plane to an image plane. The aspheric ultraviolet photoetching objective lens comprises a transmission set 1, a transmission set 2, a transmission set 3, a transmission set 4, a transmission set 5 and a transmission set 6 in the optical axis direction, the transmission set 1, the transmission set 2, the transmission set 3, the transmission set 4, the transmission set 5 and the transmission set 6 are sequentially arranged in the incident light beam direction, the transmission set 1 has negative power, the transmission set 2 has positive power, the transmission set 3 has negative power, the transmission set 4 has positive power, the transmission set 5 has positive power, and the transmission set 6 has positive power. The aspheric ultraviolet photoetching objective lens has the advantages of being good in imaging quality, compact in structure, higher in photoetching efficiency and the like.
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Description

technical field

[0001] The invention relates to an aspherical ultraviolet lithography objective lens used in lithography technology and semiconductor element manufacturing device, belonging to the technical field of projection optics. Background technique

[0002] Optical projection lithography is an optical exposure process that uses the principle of optical projection imaging to transfer high-resolution patterns to rubber-coated silicon wafers by step-and-repeat or step-and-scan exposure of IC patterns on the mask. Optical projection lithography is developed on the basis of contact and proximity lithography. The use of projection lithography can prolong the service life of the mask, and if the projection objective lens with reduced magnification is used, it is also convenient for mask production. Optical projection lithography has experienced the development of stepper and scanner. With the continuous advancement of science and technology, various types of semiconductor ...

Claims

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