39results about How to "Improve lithography resolution" patented technology

The invention discloses an optical processing system and method. The optical processing system comprises an optical system, a bearing platform, a driving system and a control system. The optical system comprises a spatial light modulator which is used as a pattern generation device of the optical system, the spatial light modulator is provided with a plurality of pixel units, and each pixel is a reflector. When the spatial light modulator generates a pattern, the reflectors of the pixel units which establish the pattern uniformly turn over by the same angle gamma to enable the spatial light modulator to form a grating structure with gamma as a blaze angle, the grating structure conducts light diffraction and light split on incident light to enable the optical system to obtain at least two coherent light beams which can form interference, the optical system accomplishes interference direct writing combined photoetching by means of the coherent light, and therefore the distinguishability of the ordinary laser direct writing technology is greatly improved.

The method for raising photoetching resolution is characterized by that in the air gap being in chrome film pattern on the masket plate photoetched by adopting closing or contact mode and in the air layer space between masked plate chrome film and photoresist layer on the silicon chip a transparent material whose refractivity is greater than that of masked plate is filled, and the surface of saidtransparent material layer which is positioned in air layer space and contacted with photoresist layer is polished, so that when it is photoetched, the transparent material is filled, therefore the refracted angle of light beam is reduced, diffraction distance is reduced, diffraction effect can be effectively weakened to raise the photoetching resolution.

The utility model relates to a super-resolution photolithography method based on the PDMS template and the silver plate material, which comprises the following steps: a metallic film layer which has week adhering capability on a base is vapor-plated on the surface of the base; a micro-nano target structure is produced on the metallic film surface; after mixed with the curing agent, the PDMS is cast on the surface of the metallic film layer; the mixture is solidified in the environment with temperature of 25 to 95 DEG C to generate an elastic film; the PDMS film is lifted and the metallic film layer adhered on the surface of the PDMS film is removed, and then the micro-nano target structure is embedded in the PDMS film; a protective layer with the thickness of 10 to 100nm is spin-coated on the PDMS surface to form a super-resolution photoetching mask; the photoresist is spread on the surface of another substrate, on which a silver layer with the thickness of 10 to 100nm is vapor-plated; the figure surface of the super-resolution photoetching mask is accurately attached with the silver layer on the photoresist surface and then the super-resolution photoetching mask and the silver film are removed through exposure, and the photoresist is developed; and then the required target figure is formed. The utility model not only improves the resolution greatly, decreases the complexity of the traditional photolithography method, but also utilizes the elasticity of the PDMS material and realizes the micro-nano structure molding on the curved surface of the material.

The invention provides probe induction surface plasmon resonance lithographic equipment and a photoetching method thereof. The device consists of a surface plasma excitation device, a probe control device, a sample platform, a probe state detection device, an optical microscope and a control system. The device has the characteristics that the needed laser power is low, the photoetching distinguishability is high, the probe is not easy to be damaged, and the photoetching film is simple; in addition, the device has the function of an atomic force microscope.

The invention provides a method for adding SRAF (Sub Resolution Assist Feature) according to rules, which relates to the technical field of semiconductors and can improve the photoetching resolution.The method comprises the following steps of: acquiring a target graph and determining a projection area; selecting an SRAF rule according to the projection area, and adding a first SRAF in the projection area based on the SRAF rule; performing conflict clearing on the first SRAF; determining a growth area according to the position of a sub-target graph, the line width of the sub-target graph, a second preset distance between the sub-target graph and a second SRAF to be formed, the line width of the second SRAF to be formed and a third preset distance between the second SRAF to be formed and the first SRAF; removing the part of the first SRAF, which is positioned in the growth area; and forming the second SRAF in the growth area according to the position of the sub-target graph and the linewidth of the sub-target graph.

The embodiment of the invention discloses an optimization method and device for mask parameters. The optimization method comprises the steps that test patterns, initial light source parameters and initial mask three-dimensional parameters are obtained, and the initial mask three-dimensional parameters include the thicknesses of initial masks and the sidewall angles of the initial masks; accordingto the initial mask three-dimensional parameters, a plurality of sets of feasible mask three-dimensional parameters can be obtained, and the feasible mask three-dimensional parameters include feasiblemask thicknesses and feasible mask sidewall angles; based on the test patterns and the initial light source parameters, feasible lithography process windows corresponding to the three-dimensional parameters of each set of feasible mask are obtained, and the feasible lithography process windows are taken as measurement reference; and the feasible mask three-dimensional parameters corresponding tothe maximum value of the feasible lithography process windows can be considered as the optimal mask three-dimensional parameters for the optimization. According to the optimization method and device for the mask parameters, the initial mask three-dimensional parameters and the initial light source parameters are optimized, a higher lithographic resolution can be obtained, and therefore, larger lithography process windows and better exposure resolution are obtained.

A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.

The invention provides a spatial light field amplitude and phase composite modulation system and method, and a detection system thereof in order to overcome the defects that only single information amplitude or phase of a light field is spatially modulated by spatial light modulation, and the photoetching resolution is low. The spatial light field amplitude and phase composite modulation system comprises an amplitude type spatial light modulator, a pixel matching optical system and a phase type spatial light modulator, the amplitude type spatial light modulator carries out pixelated amplitude modulation on an input light field, and then the pixel matching optical system carries out position adjustment on an image light field to make the image light field in one-to-one correspondence with spatial pixel positions in the phase-type spatial light modulator, then the image light field is input into the phase-type spatial light modulator, the phase-type spatial light modulator performs phase modulation on corresponding pixels in the input image light field subjected to amplitude modulation, and the output light field is a patterned light field of which the phase and the amplitude are independently modulated, so pixelization, multi-degree-of-freedom and independent modulation of amplitude and phase information of a space light field is realized.

The invention belongs to the field of integrate circuit photolithography, relating to a modeling method for processing phase shift mask in parallel. In the method, the mask is divided into N numbered vertical reticle mask structures along the longitudinal direction on the vertical juncture of the metal and the quartz of the mask to cause the dielectric constant of the adjacent vertical reticle mask structure to have different distributions on the vertical direction. The characteristic function and the characteristic value of the electric field of the characteristic vertical reticle mask structure are calculated with a spectral element method based on non-continuous Galerkin, and serve as the electric component of the vertical reticle mask structure represented by the primary function; in the horizontal direction, Schwartz iteration is adopted to solve the electric field equation and the boundary condition of N numbered vertical reticle mask structures; in each iteration, the electric field calculation task of N numbered vertical reticle mask structures is distributed to a plurality of calculation nodes to be finished in parallel; and the left and right boundary conditions of each vertical reticle mask structure adopt the solution of the adjacent vertical reticle mask structure in the previous step. The invention has the characteristics of high precision and parallel calculation and can handle the modeling of the practical large-scale phase shift mask of any structure.

The invention discloses a compound as shown in a formula (I). In the formula, R0 and Ra1-Ra12 are the same or different and independently represent H, hydroxyl or ORb, Rb is an acid-sensitive group, and a condition is that at least one of the groups R0 and Ra1-Ra12 is not H. The compound as shown in the formula (I) has a determined molecular structure, is small and single in molecular size, can beused as a photoresist material and can be prepared into positive photoresist or negative photoresist according to the photoetching requirement in a use process, and the photoetching material can meetthe requirement of high-resolution photoetching. The compound as shown in the formula (I) is connected by taking a sulfur atom as a central atom, so that the refractive index of the photoetching material can be effectively improved and the photoetching resolution is improved; and meanwhile, the compound has better solubility and film-forming property.

The invention discloses a method for improving photoetching resolution based on space-time collaborative transformation exposure. The invention relates to the field of DMD device imaging exposure. Themethod comprises the following steps: carrying out cooperative matching on three dynamic quantities including platform micro-movement, DMD graphic transformation and exposure energy adjustment to form a space-time collaborative transformation exposure mode for improving the photoetching resolution; a space-time collaborative transformation technology is applied to DMD projection photoetching; theedge smoothness of the photoetching pattern can be obviously improved under the condition of not reducing the size of the DMD micromirror or the magnifying power of the projection lens; a graph is quantified by using CAD, the sub-graph is extracted by using matlab, the micro-displacement of the piezoelectric platform is combined, and the exposure energy is controlled to carry out staggered superposition exposure on the sub-graph, so that the line width of the graph can be accurately controlled while the smoothness of the edge of the photoetching graph is improved.

The invention discloses a yin-yang text complementary light intensity mask double-beam projection photoetching device and method, which belong to the field of projection photoetching. The projection photoetching device comprises two forms, one form is a split type, the other form is a combined type, two split type light beams respectively enter two objective lenses, and the two combined type lightbeams share one objective lens. According to the equipment, two beams of light with the same or different wavelengths are used, one beam is manufacturing light, the other beam is auxiliary light, thetwo beams of light are modulated into a light intensity yin-yang complementary pattern, the auxiliary light has a correction effect on diffraction of the edge of the pattern generated by the manufacturing light, and the diffraction blur range of the edge of the pattern generated by the manufacturing light can be reduced or eliminated; therefore, the photoetching resolution ratio of the super-diffraction limit is achieved. The method is suitable for realizing the double-beam projection photoetching of the yin-yang text complementary light intensity mask, and compared with the design thought that the photoetching resolution is improved by reducing the wavelength of a light source of the traditional photoetching machine, the manufacturing difficulty and the manufacturing cost of the photoetching machine can be greatly reduced.

The invention provides a photosensitive resin, the chemical structural formula of which is shown in the specification, in which the photosensitive resin is a dianhydride monomer residue and a diamine monomer residue, m is equal to 0.2-1, and n is equal to 5-200. The molecular structure of the photosensitive resin provided by the invention contains carboxyl and trifluoromethyl, the photosensitive resin can be developed in an alkaline aqueous solution after being further prepared into photoresist, the photoresist is green and environment-friendly, the main chain is of a highly rigid structure, and the photoetching resolution is high.

The invention discloses an off-axis illumination structure for improving photolithographic resolution and a photolithographic system. The off-axis illumination structure for improving photolithographic resolution orderly comprises a reflector, a condensing lens, a mask plate and a projection lens and also comprises a phase graph sheet between the reflector and the mask plate. The phase graph sheet comprises a pole edge sector having the equal adjacent included angles and central angles in the same circle. The pole edge sector is divided into multiple curved-side illumination pole blocks having spaces in arithmetic progression through the multiple concentric circles. An incident beam is reflected to the phase graph sheet through the reflector and then deviates from a principal optic axis so that a dip angle is produced. The zero-level and first-level diffraction light penetrating the graph of the mask plate passes through the projection lens and forms interference patterns on a photoresist of a wafer. The pole edge sector of the phase graph sheet is divided into the multiple curved-side illumination pole blocks so that the number of the illumination poles is increased, circular and pole edge illumination double characteristics are obtained, the resolution of the lithography is improved and the depth of focus is increased.