39results about How to "Improve lithography resolution" patented technology

The invention provides a reflective type ultra-violet lithography objective lens. The transmitting direction of an objective plane input beam is used as a system optical axis, and a first transmission set, a reflection set and a second transmission set are placed on the system optical axis in sequence. The first transmission set has positive focal power, the reflection set has negative focal power, and the second transmission set has positive focal power. The first transmission set comprises a first positive lens, a first negative lens, a second positive lens, a third positive lens, a fourth positive lens, a second negative lens, a fifth positive lens, a sixth positive lens, a third negative lens, a seventh positive lens and an eighth positive lens, the reflection set comprises a first reflector and a second reflector, and the second transmission set comprises a ninth positive lens, a forth negative lens, a tenth positive lens, a fifth negative lens, an eleventh positive lens, a twelfth positive lens, a thirteenth positive lens, a fourteenth positive lens, a fifteenth positive lens, a sixteenth positive lens, a seventeenth positive lens, an eighteenth positive lens and a nineteenth positive lens. The reflective type ultra-violet lithography objective lens has the advantages that the numerical aperture is large, and the imagining quality is good.

The invention discloses an optical processing system and method. The optical processing system comprises an optical system, a bearing platform, a driving system and a control system. The optical system comprises a spatial light modulator which is used as a pattern generation device of the optical system, the spatial light modulator is provided with a plurality of pixel units, and each pixel is a reflector. When the spatial light modulator generates a pattern, the reflectors of the pixel units which establish the pattern uniformly turn over by the same angle gamma to enable the spatial light modulator to form a grating structure with gamma as a blaze angle, the grating structure conducts light diffraction and light split on incident light to enable the optical system to obtain at least two coherent light beams which can form interference, the optical system accomplishes interference direct writing combined photoetching by means of the coherent light, and therefore the distinguishability of the ordinary laser direct writing technology is greatly improved.

The invention discloses a projection optical system which is used for imaging images in an object plane into an image plane. The projection optical system sequentially comprises a first lens unit (L1), a second lens unit (L2), a third lens unit (L3), a fourth lens unit (L4) and a fifth lens unit (L5) which are arranged in the direction of the optical axis of the system; the lens units are positioned in the same optical axis; the first lens unit (L1) has negative refractive power; the second lens unit (L2) has positive refractive power; the third lens unit (L3) has negative refractive power; the fourth lens unit (L4) has positive refractive power; the fifth lens unit (L5) has positive refractive power; and all lenses adopt spherical surfaces. The projection optical system can better compensate aberration, improve the imaging quality, enhance the system resolution and improve the photolithography efficiency.

The method for raising photoetching resolution is characterized by that in the air gap being in chrome film pattern on the masket plate photoetched by adopting closing or contact mode and in the air layer space between masked plate chrome film and photoresist layer on the silicon chip a transparent material whose refractivity is greater than that of masked plate is filled, and the surface of saidtransparent material layer which is positioned in air layer space and contacted with photoresist layer is polished, so that when it is photoetched, the transparent material is filled, therefore the refracted angle of light beam is reduced, diffraction distance is reduced, diffraction effect can be effectively weakened to raise the photoetching resolution.

The utility model relates to a super-resolution photolithography method based on the PDMS template and the silver plate material, which comprises the following steps: a metallic film layer which has week adhering capability on a base is vapor-plated on the surface of the base; a micro-nano target structure is produced on the metallic film surface; after mixed with the curing agent, the PDMS is cast on the surface of the metallic film layer; the mixture is solidified in the environment with temperature of 25 to 95 DEG C to generate an elastic film; the PDMS film is lifted and the metallic film layer adhered on the surface of the PDMS film is removed, and then the micro-nano target structure is embedded in the PDMS film; a protective layer with the thickness of 10 to 100nm is spin-coated on the PDMS surface to form a super-resolution photoetching mask; the photoresist is spread on the surface of another substrate, on which a silver layer with the thickness of 10 to 100nm is vapor-plated; the figure surface of the super-resolution photoetching mask is accurately attached with the silver layer on the photoresist surface and then the super-resolution photoetching mask and the silver film are removed through exposure, and the photoresist is developed; and then the required target figure is formed. The utility model not only improves the resolution greatly, decreases the complexity of the traditional photolithography method, but also utilizes the elasticity of the PDMS material and realizes the micro-nano structure molding on the curved surface of the material.

The invention discloses a surface plasmon imaging photoetching structure which is characterized by comprising a super lens structure (1), a first optical grating (2), a corrosion-resistant agent layer (5), a substrate (6) and a second optical grating (7). The first optical grating (2) and the second optical grating (7) are positioned on the upper side of the super lens structure (1), and the corrosion-resistant agent layer (5) is positioned on the lower side of the super lens structure (1). The surface plasmon imaging photoetching structure has the advantages that SPPs (surface plasmon polaritons) can be excited by the optical gratings from two ends of the surface plasmon imaging photoetching structure and are interfered with one another to form interference fringes, evanescent waves are amplified by the super lens structure, super-resolution images can be formed on corrosion-resistant agents, and accordingly exposure is further completed; short wavelength characteristics of the SPPs are sufficiently utilized, and the super-resolution ability of super lenses is utilized, so that the photoetching resolution is super high; far-field imaging photoetching can be implemented, and the focal depth can be improved advantageously.

The invention provides probe induction surface plasmon resonance lithographic equipment and a photoetching method thereof. The device consists of a surface plasma excitation device, a probe control device, a sample platform, a probe state detection device, an optical microscope and a control system. The device has the characteristics that the needed laser power is low, the photoetching distinguishability is high, the probe is not easy to be damaged, and the photoetching film is simple; in addition, the device has the function of an atomic force microscope.

The invention provides a method for adding SRAF (Sub Resolution Assist Feature) according to rules, which relates to the technical field of semiconductors and can improve the photoetching resolution.The method comprises the following steps of: acquiring a target graph and determining a projection area; selecting an SRAF rule according to the projection area, and adding a first SRAF in the projection area based on the SRAF rule; performing conflict clearing on the first SRAF; determining a growth area according to the position of a sub-target graph, the line width of the sub-target graph, a second preset distance between the sub-target graph and a second SRAF to be formed, the line width of the second SRAF to be formed and a third preset distance between the second SRAF to be formed and the first SRAF; removing the part of the first SRAF, which is positioned in the growth area; and forming the second SRAF in the growth area according to the position of the sub-target graph and the linewidth of the sub-target graph.

The invention provides a high-image-quality projection optical system of an ultraviolet band. The high-image-quality projection optical system is used for imaging an image on an object plane into an image plane. The high-image-quality projection optical system of the ultraviolet band comprises a transmission group 1, a transmission group 2, a transmission group 3, a transmission group 4, a transmission group 5, a transmission group 6 and a transmission group 7 which are arranged along the optical axis direction and are sequentially distributed from the incidence direction of a light beam; the transmission group 1 has positive focal power, the transmission group 2 has negative focal power, the transmission group 3 has positive focal power, the transmission group 4 has the negative focal power, the transmission group 5 has the negative focal power, the transmission group 6 has the positive focal power, and the transmission group 7 has the positive focal power. The high-image-quality projection optical system of the ultraviolet band has the advantages of high image quality, compact structure and the like, and the image of the object plane can be narrowed for 0.25 time to be imaged into the image plane.

The embodiment of the invention discloses an optimization method and device for mask parameters. The optimization method comprises the steps that test patterns, initial light source parameters and initial mask three-dimensional parameters are obtained, and the initial mask three-dimensional parameters include the thicknesses of initial masks and the sidewall angles of the initial masks; accordingto the initial mask three-dimensional parameters, a plurality of sets of feasible mask three-dimensional parameters can be obtained, and the feasible mask three-dimensional parameters include feasiblemask thicknesses and feasible mask sidewall angles; based on the test patterns and the initial light source parameters, feasible lithography process windows corresponding to the three-dimensional parameters of each set of feasible mask are obtained, and the feasible lithography process windows are taken as measurement reference; and the feasible mask three-dimensional parameters corresponding tothe maximum value of the feasible lithography process windows can be considered as the optimal mask three-dimensional parameters for the optimization. According to the optimization method and device for the mask parameters, the initial mask three-dimensional parameters and the initial light source parameters are optimized, a higher lithographic resolution can be obtained, and therefore, larger lithography process windows and better exposure resolution are obtained.

A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.

The invention discloses a compact maskless photoetching system and an exposure method thereof, belongs to the field of maskless digital photoetching, and aims to solve the problem that ultraviolet light energy is sharply reduced due to light path folding in the prior art. According to the compact maskless photoetching system and the exposure method thereof, purple light and red light are integrated on the same plane, so that it can be ensured that the purple light and the red light form a coaxial light source; the red light is used for illumination and exposure pattern alignment; the purple light is used for exposure distribution andthe periphery of an optical axis; and thus, the problem of overlarge size of an existing maskless photoetching system caused by complex structure and excessive used elements in the existing maskless photoetching system is solved, and the problem that the photoetching efficiency of the photoetching system is low due to low light energy utilization rate caused by a complex light path is also solved.

The invention provides a spatial light field amplitude and phase composite modulation system and method, and a detection system thereof in order to overcome the defects that only single information amplitude or phase of a light field is spatially modulated by spatial light modulation, and the photoetching resolution is low. The spatial light field amplitude and phase composite modulation system comprises an amplitude type spatial light modulator, a pixel matching optical system and a phase type spatial light modulator, the amplitude type spatial light modulator carries out pixelated amplitude modulation on an input light field, and then the pixel matching optical system carries out position adjustment on an image light field to make the image light field in one-to-one correspondence with spatial pixel positions in the phase-type spatial light modulator, then the image light field is input into the phase-type spatial light modulator, the phase-type spatial light modulator performs phase modulation on corresponding pixels in the input image light field subjected to amplitude modulation, and the output light field is a patterned light field of which the phase and the amplitude are independently modulated, so pixelization, multi-degree-of-freedom and independent modulation of amplitude and phase information of a space light field is realized.

The invention belongs to the field of integrate circuit photolithography, relating to a modeling method for processing phase shift mask in parallel. In the method, the mask is divided into N numbered vertical reticle mask structures along the longitudinal direction on the vertical juncture of the metal and the quartz of the mask to cause the dielectric constant of the adjacent vertical reticle mask structure to have different distributions on the vertical direction. The characteristic function and the characteristic value of the electric field of the characteristic vertical reticle mask structure are calculated with a spectral element method based on non-continuous Galerkin, and serve as the electric component of the vertical reticle mask structure represented by the primary function; in the horizontal direction, Schwartz iteration is adopted to solve the electric field equation and the boundary condition of N numbered vertical reticle mask structures; in each iteration, the electric field calculation task of N numbered vertical reticle mask structures is distributed to a plurality of calculation nodes to be finished in parallel; and the left and right boundary conditions of each vertical reticle mask structure adopt the solution of the adjacent vertical reticle mask structure in the previous step. The invention has the characteristics of high precision and parallel calculation and can handle the modeling of the practical large-scale phase shift mask of any structure.

The invention relates to an integrated capacitor, a manufacturing method thereof and a radio frequency circuit. The integrated capacitor includes a first metal layer; a first dielectric layer which isarranged on the first metal layer; a second metal layer which is arranged on the first dielectric layer; a second dielectric layer which is arranged on the first dielectric layer; a third metal layerwhich is arranged on the second metal layer and is in direct contact with the second metal layer, the third metal layer extends to the second dielectric layer, and the thickness of the third metal layer is larger than that of the second metal layer; wherein the first metal layer comprises a first polar plate of the capacitor, the first dielectric layer comprises a capacitor dielectric layer of the capacitor, and the second metal layer comprises a second polar plate of the capacitor; all edges of the second metal layer are covered by the second dielectric layer, so the contact area of the third metal layer and the second metal layer is smaller than the area of the second polar plate. On the premise of ensuring that the capacitor obtains an accurate capacitance value, a high quality factorcan be obtained without sacrificing the capacitance density, the occupied area and reliability of the capacitor.

The invention discloses application of a metal-doped Te-based phase change material as an electron beam photoresist, and an electron beam photoetching method based on the metal-doped Te-based phase change material. The photoetching method comprises the following steps of: S1, depositing a metal-doped Te-based phase change thin film on a substrate, and S2, irradiating the phase change thin film byadopting an electron beam to crystallize the area irradiated by the electron beam so as to obtain a photoetching sample. The electron beam photoetching method based on the metal-doped Te-based phase change material is simple in process, only needs a magnetron co-sputtering method, does not need the steps of gluing, baking and the like, and is low in cost; in addition, the phase change material serving as the electron beam photoresist belongs to an environment-friendly pollution-free inorganic material; the constituent units of the phase change material are atoms, which have very low photoetching edge roughness and very high photoetching resolution.

The invention discloses a compound as shown in a formula (I). In the formula, R0 and Ra1-Ra12 are the same or different and independently represent H, hydroxyl or ORb, Rb is an acid-sensitive group, and a condition is that at least one of the groups R0 and Ra1-Ra12 is not H. The compound as shown in the formula (I) has a determined molecular structure, is small and single in molecular size, can beused as a photoresist material and can be prepared into positive photoresist or negative photoresist according to the photoetching requirement in a use process, and the photoetching material can meetthe requirement of high-resolution photoetching. The compound as shown in the formula (I) is connected by taking a sulfur atom as a central atom, so that the refractive index of the photoetching material can be effectively improved and the photoetching resolution is improved; and meanwhile, the compound has better solubility and film-forming property.

The invention discloses a method for improving photoetching resolution based on space-time collaborative transformation exposure. The invention relates to the field of DMD device imaging exposure. Themethod comprises the following steps: carrying out cooperative matching on three dynamic quantities including platform micro-movement, DMD graphic transformation and exposure energy adjustment to form a space-time collaborative transformation exposure mode for improving the photoetching resolution; a space-time collaborative transformation technology is applied to DMD projection photoetching; theedge smoothness of the photoetching pattern can be obviously improved under the condition of not reducing the size of the DMD micromirror or the magnifying power of the projection lens; a graph is quantified by using CAD, the sub-graph is extracted by using matlab, the micro-displacement of the piezoelectric platform is combined, and the exposure energy is controlled to carry out staggered superposition exposure on the sub-graph, so that the line width of the graph can be accurately controlled while the smoothness of the edge of the photoetching graph is improved.

The invention discloses a yin-yang text complementary light intensity mask double-beam projection photoetching device and method, which belong to the field of projection photoetching. The projection photoetching device comprises two forms, one form is a split type, the other form is a combined type, two split type light beams respectively enter two objective lenses, and the two combined type lightbeams share one objective lens. According to the equipment, two beams of light with the same or different wavelengths are used, one beam is manufacturing light, the other beam is auxiliary light, thetwo beams of light are modulated into a light intensity yin-yang complementary pattern, the auxiliary light has a correction effect on diffraction of the edge of the pattern generated by the manufacturing light, and the diffraction blur range of the edge of the pattern generated by the manufacturing light can be reduced or eliminated; therefore, the photoetching resolution ratio of the super-diffraction limit is achieved. The method is suitable for realizing the double-beam projection photoetching of the yin-yang text complementary light intensity mask, and compared with the design thought that the photoetching resolution is improved by reducing the wavelength of a light source of the traditional photoetching machine, the manufacturing difficulty and the manufacturing cost of the photoetching machine can be greatly reduced.

An optical processing system and method. The system comprises an optical system, a bearing platform, a drive system and a control system, wherein the optical system comprises a spatial light modulator (12) which is used as a pattern generation device of the optical system, the spatial light modulator (12) is provided with several pixel units, and each pixel unit is a reflecting mirror (121). When the spatial light modulator (12) conducts pattern generation, the reflecting mirrors (121) of the pixel units participating in pattern construction are uniformly turned over at the same angle γ, so that the spatial light modulator (12) constitutes a grating structure using γ as a blazing angle. The grating structure conducts diffractive light splitting on incident light, so that the optical system obtains at least two beams of coherent light capable of forming interference. The optical system uses the coherent light to complete interference direct-writing composite photoetching, so that the resolution of ordinary laser direct-writing technology is greatly improved.

The invention provides a photosensitive resin, the chemical structural formula of which is shown in the specification, in which the photosensitive resin is a dianhydride monomer residue and a diamine monomer residue, m is equal to 0.2-1, and n is equal to 5-200. The molecular structure of the photosensitive resin provided by the invention contains carboxyl and trifluoromethyl, the photosensitive resin can be developed in an alkaline aqueous solution after being further prepared into photoresist, the photoresist is green and environment-friendly, the main chain is of a highly rigid structure, and the photoetching resolution is high.

The invention discloses a photolithography method, which is used for photolithography of a pattern to be processed without a mask plate. The method includes the following steps: S1: splitting the pattern to be processed K times to form K sub-patterns; S2: preset split width M, respectively cut the K sub-patterns into n sub-strips according to the preset split width M; The sub-strips are reorganized to form n new strips; S4: photolithography of the new strips, wherein, each time a new strip is photolithographically completed, the width M of one sub-strip is stepped, and another New strip lithography to be processed. By reorganizing the n sub-strips formed by splitting and segmenting the graphics to be processed, the resolution of the sub-strips is enhanced, thereby achieving the effect of enhancing the lithography resolution.

The invention discloses an off-axis illumination structure for improving photolithographic resolution and a photolithographic system. The off-axis illumination structure for improving photolithographic resolution orderly comprises a reflector, a condensing lens, a mask plate and a projection lens and also comprises a phase graph sheet between the reflector and the mask plate. The phase graph sheet comprises a pole edge sector having the equal adjacent included angles and central angles in the same circle. The pole edge sector is divided into multiple curved-side illumination pole blocks having spaces in arithmetic progression through the multiple concentric circles. An incident beam is reflected to the phase graph sheet through the reflector and then deviates from a principal optic axis so that a dip angle is produced. The zero-level and first-level diffraction light penetrating the graph of the mask plate passes through the projection lens and forms interference patterns on a photoresist of a wafer. The pole edge sector of the phase graph sheet is divided into the multiple curved-side illumination pole blocks so that the number of the illumination poles is increased, circular and pole edge illumination double characteristics are obtained, the resolution of the lithography is improved and the depth of focus is increased.

The invention discloses a projection optical system which is used for imaging images in an object plane into an image plane. The projection optical system sequentially comprises a first lens unit (L1), a second lens unit (L2), a third lens unit (L3), a fourth lens unit (L4) and a fifth lens unit (L5) which are arranged in the direction of the optical axis of the system; the lens units are positioned in the same optical axis; the first lens unit (L1) has negative refractive power; the second lens unit (L2) has positive refractive power; the third lens unit (L3) has negative refractive power; the fourth lens unit (L4) has positive refractive power; the fifth lens unit (L5) has positive refractive power; and all lenses adopt spherical surfaces. The projection optical system can better compensate aberration, improve the imaging quality, enhance the system resolution and improve the photolithography efficiency.

The invention provides an aspheric ultraviolet photoetching objective lens which is used for imaging an image of an object plane to an image plane. The aspheric ultraviolet photoetching objective lens comprises a transmission set 1, a transmission set 2, a transmission set 3, a transmission set 4, a transmission set 5 and a transmission set 6 in the optical axis direction, the transmission set 1, the transmission set 2, the transmission set 3, the transmission set 4, the transmission set 5 and the transmission set 6 are sequentially arranged in the incident light beam direction, the transmission set 1 has negative power, the transmission set 2 has positive power, the transmission set 3 has negative power, the transmission set 4 has positive power, the transmission set 5 has positive power, and the transmission set 6 has positive power. The aspheric ultraviolet photoetching objective lens has the advantages of being good in imaging quality, compact in structure, higher in photoetching efficiency and the like.

The invention provides a large-numerical-aperture projection optical system comprising two reflecting mirrors. The projection optical system is used for imaging images on an object plane into an image plane. The large-numerical-aperture projection optical system comprising the two reflecting mirrors comprises the two ellipsoid reflecting mirrors coaxially placed and seven transmission sets in the optical axis direction. The transmission set G1 with the positive focal distance, the transmission set G2 with the positive focal distance, the transmission set G3 with the positive focal distance, the transmission set G4 with the positive focal distance, the transmission set G5 with the negative focal distance, the transmission set G6 with the negative focal distance, the transmission set G7 with the positive focal distance and the transmission set G8 with the positive focal distance are sequentially arrayed in the incidence direction of light beams. The large-numerical-aperture projection optical system comprising the two reflecting mirrors has the advantages that the numerical aperture is large, and the imaging quality is good.

The invention provides a reflective type ultra-violet lithography objective lens. The transmitting direction of an objective plane input beam is used as a system optical axis, and a first transmission set, a reflection set and a second transmission set are placed on the system optical axis in sequence. The first transmission set has positive focal power, the reflection set has negative focal power, and the second transmission set has positive focal power. The first transmission set comprises a first positive lens, a first negative lens, a second positive lens, a third positive lens, a fourth positive lens, a second negative lens, a fifth positive lens, a sixth positive lens, a third negative lens, a seventh positive lens and an eighth positive lens, the reflection set comprises a first reflector and a second reflector, and the second transmission set comprises a ninth positive lens, a forth negative lens, a tenth positive lens, a fifth negative lens, an eleventh positive lens, a twelfth positive lens, a thirteenth positive lens, a fourteenth positive lens, a fifteenth positive lens, a sixteenth positive lens, a seventeenth positive lens, an eighteenth positive lens and a nineteenth positive lens. The reflective type ultra-violet lithography objective lens has the advantages that the numerical aperture is large, and the imagining quality is good.

The invention relates to the technical field of a manufacturing process and layout design of a 65-nanometre integrated circuit and discloses a cell-based hierarchical optical proximity correction (OPC) method. The method comprises the following steps of: regularizing graphs of all standard units by introducing a concept of hierarchical design into full-chip OPC process; carrying out OPC on the standard units in the process of construction of a standard unit library; and replacing part of the standard units by units which are subjected to the OPC after a full-chip layout is obtained, so that the OPC in a full-chip planishing mode is not required, the data storage content of a mask is reduced greatly, a photoetching resolution can be improved conveniently, a production error is further reduced, and the production efficiency of a chip is improved.