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Method for adding SRAF according to rules

A regular and uniform technology, applied in the field of adding SRAF according to rules, which can solve the problems of image overlap, mutual misalignment of images, and too close distance between images.

Active Publication Date: 2019-08-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the sub-resolution auxiliary graphics added in this way will have problems such as image overlap, too close distance between images, and mutual misalignment between images.
These issues still affect lithography resolution

Method used

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  • Method for adding SRAF according to rules
  • Method for adding SRAF according to rules
  • Method for adding SRAF according to rules

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] Embodiments of the present invention provide a method for adding SRAF according to rules, such as figure 1 As shown, it can be achieved through the following steps:

[0036] S11, such as Figure 2-3 As shown, the target figure is acquired and the projection area is determined; the target figure includes a plurality of sub-target figures 11 . Such as Figure 5 As shown, the SRAF rule is selected according to the projection area, and the first sub-reso...

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Abstract

The invention provides a method for adding SRAF (Sub Resolution Assist Feature) according to rules, which relates to the technical field of semiconductors and can improve the photoetching resolution.The method comprises the following steps of: acquiring a target graph and determining a projection area; selecting an SRAF rule according to the projection area, and adding a first SRAF in the projection area based on the SRAF rule; performing conflict clearing on the first SRAF; determining a growth area according to the position of a sub-target graph, the line width of the sub-target graph, a second preset distance between the sub-target graph and a second SRAF to be formed, the line width of the second SRAF to be formed and a third preset distance between the second SRAF to be formed and the first SRAF; removing the part of the first SRAF, which is positioned in the growth area; and forming the second SRAF in the growth area according to the position of the sub-target graph and the linewidth of the sub-target graph.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for adding SRAF according to rules. Background technique [0002] With the gradual reduction of the size of layout graphics, the requirements for photolithography resolution are getting higher and higher in the integrated circuit manufacturing process. [0003] In order to obtain a higher lithography resolution, it is necessary to correct the layout target pattern, and at the same time add a sub-resolution auxiliary pattern (Sub Resolution Assist Feature, referred to as SRAF) around the target pattern, so that it is consistent with the target pattern during the exposure process. The light intensity received by the photoresist corresponding to the sparsely arranged part of the pattern is basically equal to the light intensity received by the photoresist corresponding to the densely arranged part in the target pattern. [0004] Existing technologies usually use a m...

Claims

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Application Information

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IPC IPC(8): G03F1/76G03F1/38G03F7/20
CPCG03F1/76G03F1/38G03F7/70691
Inventor 高澎铮韦亚一张利斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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