Integrated capacitor, manufacturing method thereof and radio frequency circuit

Abstract

The invention relates to an integrated capacitor, a manufacturing method thereof and a radio frequency circuit. The integrated capacitor includes a first metal layer; a first dielectric layer which isarranged on the first metal layer; a second metal layer which is arranged on the first dielectric layer; a second dielectric layer which is arranged on the first dielectric layer; a third metal layerwhich is arranged on the second metal layer and is in direct contact with the second metal layer, the third metal layer extends to the second dielectric layer, and the thickness of the third metal layer is larger than that of the second metal layer; wherein the first metal layer comprises a first polar plate of the capacitor, the first dielectric layer comprises a capacitor dielectric layer of the capacitor, and the second metal layer comprises a second polar plate of the capacitor; all edges of the second metal layer are covered by the second dielectric layer, so the contact area of the third metal layer and the second metal layer is smaller than the area of the second polar plate. On the premise of ensuring that the capacitor obtains an accurate capacitance value, a high quality factorcan be obtained without sacrificing the capacitance density, the occupied area and reliability of the capacitor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an integrated capacitor, a method for manufacturing the integrated capacitor, and a radio frequency circuit. Background technique [0002] Wafer-level integrated capacitors, as a passive component, are commonly found in radio frequency integrated circuits. Integrated capacitors combined with other on-wafer circuit elements such as inductors and transistors can form circuit networks and microsystems with multiple functions, including filters, impedance matching networks, power amplifiers, low-noise amplifiers, baluns, coupling dividers, combiners, etc. [0003] If the capacitance value of the integrated capacitor deviates too much from the design value, it will affect the yield of the radio frequency circuit, for example, it will cause the center frequency and bandwidth of the filter to deviate from the design value. Contents of the invention [0004] Based on this, ...

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Problems solved by technology

[0003] If the capacitance value of the integrated capacitor deviates too much from the design value, it will affect the yield of the RF circuit, for example, it will cause the center frequency and bandwidth of the filter to deviate from the design value

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