Optimization method and device for mask parameters

An optimization method and a mask technology, which are applied in the photolithographic process exposure device, the photographic process of the pattern surface, the original for photomechanical processing, etc., can solve the problems that the photolithographic process window cannot reach the optimal value, etc.

Inactive Publication Date: 2018-11-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology

[0005] In order to solve the problem that the optimized mask pattern parameters and light source parameters in the prior art cannot make the photoli

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  • Optimization method and device for mask parameters
  • Optimization method and device for mask parameters
  • Optimization method and device for mask parameters

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[0049] In order to enable those skilled in the art to better understand the solutions of this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only It is a part of the embodiments of this application, but not all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of this application.

[0050] In the prior art, the initial mask pattern and light source parameters can be optimized to effectively increase the photolithography process window. For example, after the 28nm technology node, the SMO method is widely used. Specifically, the initial mask pattern and initial light source parameters can be obtained first, assuming that the light source is incident perp...

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Abstract

The embodiment of the invention discloses an optimization method and device for mask parameters. The optimization method comprises the steps that test patterns, initial light source parameters and initial mask three-dimensional parameters are obtained, and the initial mask three-dimensional parameters include the thicknesses of initial masks and the sidewall angles of the initial masks; accordingto the initial mask three-dimensional parameters, a plurality of sets of feasible mask three-dimensional parameters can be obtained, and the feasible mask three-dimensional parameters include feasiblemask thicknesses and feasible mask sidewall angles; based on the test patterns and the initial light source parameters, feasible lithography process windows corresponding to the three-dimensional parameters of each set of feasible mask are obtained, and the feasible lithography process windows are taken as measurement reference; and the feasible mask three-dimensional parameters corresponding tothe maximum value of the feasible lithography process windows can be considered as the optimal mask three-dimensional parameters for the optimization. According to the optimization method and device for the mask parameters, the initial mask three-dimensional parameters and the initial light source parameters are optimized, a higher lithographic resolution can be obtained, and therefore, larger lithography process windows and better exposure resolution are obtained.

Description

Technical field [0001] This application relates to the field of semiconductors, and in particular to a method and device for optimizing mask parameters. Background technique [0002] In the semiconductor field, photolithography is an important process in the production of integrated circuits. Specifically, through exposure, the mask pattern on the mask can be imaged on the object to be processed in a certain proportion. With the development of integrated circuits, the size of semiconductor devices has gradually decreased, and people’s demands for increasing the resolution of photolithography and the process window (PW) of photolithography have become stronger. Among them, the photolithography process window refers to the guaranteed mask. The range of exposure dose and defocus amount that the mold pattern can be correctly copied to the silicon wafer can contain three information: imaging accuracy, exposure and depth of focus. [0003] In the prior art, the photolithography process ...

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Application Information

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IPC IPC(8): G03F1/38G03F1/44G03F7/20
CPCG03F1/38G03F1/44G03F7/70616
Inventor 何建芳韦亚一董立松赵利俊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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