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Compact maskless photoetching system and exposure method thereof

A maskless lithography, compact technology, applied in the field of projection lithography technology, can solve the problems of large size of optical components, reduction of system volume, increase of system cost, etc., to improve lithography efficiency, simplify optical path structure, utilize rate-boosting effect

Inactive Publication Date: 2021-06-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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AI Technical Summary

Problems solved by technology

Although the folding of the optical path can effectively reduce the volume of the light source, in the large-array projection lithography system, the size of the optical components is large, and it is difficult to effectively reduce the volume of the system depending on the optical path folding alone.
In addition, excessive optical path folding leads to a sharp reduction in the energy of ultraviolet light, while increasing the power of ultraviolet light, considering the difficulty of manufacturing high-power ultraviolet light sources and the particularity of heat dissipation management, resulting in increased system costs

Method used

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  • Compact maskless photoetching system and exposure method thereof
  • Compact maskless photoetching system and exposure method thereof
  • Compact maskless photoetching system and exposure method thereof

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Embodiment Construction

[0037] In order to facilitate those skilled in the art to understand the technical content of the present invention, the content of the present invention will be further explained below in conjunction with the accompanying drawings.

[0038] DMD-based visual maskless lithography generally uses light with wavelengths of 436nm, 405nm, and 365nm as the lithography light source, taking 405nm as an example. The 650nm red light is selected as the illumination and alignment light source, because it does not interact with the photoresist, and the camera can collect the image of the red light passing through the DMD and the subsequent optical path on the photoresist. Since 405nm purple light is the exposure light source, higher light intensity is required, while red light only serves as an illumination alignment, and the optical power does not need to be too high, so multiple purple light LEDs and one red light LED are integrated on one panel .

[0039] The number of specific purple L...

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Abstract

The invention discloses a compact maskless photoetching system and an exposure method thereof, belongs to the field of maskless digital photoetching, and aims to solve the problem that ultraviolet light energy is sharply reduced due to light path folding in the prior art. According to the compact maskless photoetching system and the exposure method thereof, purple light and red light are integrated on the same plane, so that it can be ensured that the purple light and the red light form a coaxial light source; the red light is used for illumination and exposure pattern alignment; the purple light is used for exposure distribution andthe periphery of an optical axis; and thus, the problem of overlarge size of an existing maskless photoetching system caused by complex structure and excessive used elements in the existing maskless photoetching system is solved, and the problem that the photoetching efficiency of the photoetching system is low due to low light energy utilization rate caused by a complex light path is also solved.

Description

technical field [0001] The invention belongs to the field of maskless digital photolithography, in particular to a projection photolithography technology based on an ultraviolet exposure light source. Background technique [0002] Since it does not require complex and expensive mask processing, maskless digital lithography has broad application prospects in PCB circuit manufacturing, micro-opto-electromechanical and biochip processing, and micro-nano semiconductor device preparation. In particular, with the unique digital image generation function based on digital micromirror (DMD) or liquid crystal spatial light modulator (SLM) and the unique ultraviolet selective exposure characteristics of photoresist, visible lithography can be realized, which is especially suitable for Lithography image flexible and diverse scientific research level lithography instrumentation needs. In recent years, the integration of small desktops is one of the development trends of maskless digital...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/2057G03F7/70291G03F7/2004G03F7/70008G03F7/70075G03F7/70858G03F7/7015
Inventor 李春周思瀚张思琪兰长勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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