Photosensitive resin, photoresist and preparation method and application thereof

A technology of photosensitive resin and photoresist, which is used in optomechanical equipment, photosensitive materials for optomechanical equipment, optics, etc.

Pending Publication Date: 2022-03-01
广东粤港澳大湾区黄埔材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of the traditional positive photosensitive polyimide resin is complicated, and the development process is difficult to be accurately controlled, resulting in low resolution of the lithography pattern, and mainly uses organic solvents as the developer, such as cyclohexanone, N-methyl Pyrrolidone, etc. are not only not environmentally friendly, but also have a strong smell, which will pollute the working environment
Alkaline aqueous solutions such as tetramethylammonium hydroxide aqueous solution (THAM aq) are green and environmentally friendly developer solutions. If photosensitive polyimide resins can be dissolved in alkaline aqueous solutions, it will greatly facilitate the popularization and application of photosensitive polyimide resins. , but generally PI is difficult to dissolve in alkaline aqueous solution such as THAM aq

Method used

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  • Photosensitive resin, photoresist and preparation method and application thereof
  • Photosensitive resin, photoresist and preparation method and application thereof
  • Photosensitive resin, photoresist and preparation method and application thereof

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preparation example Construction

[0065] One embodiment of the present invention also provides a method for preparing a photosensitive resin, including the following steps S10-S20.

[0066] Step S10: Add dianhydride monomer, diamine monomer and 3,3'-dicarboxy-4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl monomer in the first Mixing and dissolving in an organic solvent for condensation reaction to prepare polyamic acid prepolymer.

[0067] Further, the conditions of the condensation reaction are: react in an ice-bath environment for 8h-24h.

[0068] Furthermore, the condensation reaction is carried out under anhydrous and oxygen-free conditions.

[0069] Wherein, the structural formula of dianhydride monomer is:

[0070] The structural formula of diamine monomer is:

[0071] The structural formula of 3,3'-dicarboxy-4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl monomer is:

[0072] The structural formula of polyamic acid prepolymer is:

[0073]

[0074] In a specific example, the dianhydr...

Embodiment 1

[0125] Preparation of step 1, 3,3'-dicarboxy-4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl monomer:

[0126] (1) Add 5.48g (20mmol) 4,4'-dihydroxy-3,3'-biphenyldicarboxylic acid and 9.20g (44mmol) 2-fluoro-5-nitrobenzotrifluoride to 160ml N,N-diphenyl After dissolving in methylformamide (DMF), add 6.08g (44mmol) potassium carbonate (K 2 CO 3 ) as a catalyst, toluene as an azeotrope of water produced in the reaction process, reflux reaction for 20h under the protection of nitrogen to generate 3,3'-dicarboxy-4,4'-bis(4-nitro-2-trifluoroform 10.42g of phenyloxy)biphenyl. The chemical reaction formula is as follows:

[0127]

[0128] (2) 6.52g (10mmol) of 3,3'-dicarboxy-4,4'-bis(4-nitro-2-trifluoromethylphenoxy)biphenyl prepared in step (1) in the absence of Water is dissolved in 100ml tetrahydrofuran (THF) under anaerobic conditions, a catalytic amount of palladium carbon (Pd / C) is added, hydrogen (H 2 ) as a reducing agent and maintain a pressure of 5 bar for 4 hour...

Embodiment 2

[0140] Step 1, with the step 1 of embodiment 1.

[0141] Step 2, preparation of photosensitive resin:

[0142] (1) Under anhydrous and oxygen-free conditions, add 4.15 g (7 mmol) of 3,3'-dicarboxy-4,4'-di( 4-amino-2-trifluoromethylphenoxy)biphenyl monomer, 0.60 g (3 mmol) of 4,4'-diaminodiphenyl ether (ODA, diamine monomer) and 50 ml of DMF. After all substances in the system were completely dissolved, 3.22g (10mmol) of 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA, dianhydride monomer) was added, and stirred for 8h in an ice-bath environment.

[0143] (2) After the reaction in (1) is completed and the reaction system returns to 25°C, add 5.4ml of acetic anhydride and 1ml of pyridine to continue the reaction for 24 hours, and then purify by methanol precipitation, filtration, and Soxhlet extraction.

[0144] The chemical reaction formula of step 2 is as follows:

[0145]

[0146] Step 3, with step 3 of embodiment 1.

[0147] Step 4, with step 4 of embodiment 1...

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Abstract

The invention provides a photosensitive resin, the chemical structural formula of which is shown in the specification, in which the photosensitive resin is a dianhydride monomer residue and a diamine monomer residue, m is equal to 0.2-1, and n is equal to 5-200. The molecular structure of the photosensitive resin provided by the invention contains carboxyl and trifluoromethyl, the photosensitive resin can be developed in an alkaline aqueous solution after being further prepared into photoresist, the photoresist is green and environment-friendly, the main chain is of a highly rigid structure, and the photoetching resolution is high.

Description

technical field [0001] The invention relates to the field of functional polymer materials, in particular to a photosensitive resin, a photoresist and a preparation method and application thereof. Background technique [0002] In chip design, the encapsulation and passivation insulating layer need to adopt specific patterns, but the traditional insulating material polyimide (PI) itself does not have photosensitive function and most of them are insoluble. To obtain the required pattern, etching process must be used. Graphic transfer. For example: J.Electrochem.Soc., 1991,138 (4), 1080-1084 has recorded that a kind of prepolymer PAA contains the positive photosensitive polyimide resin (PSPI) of o-nitrophenyl structure, U.S. Patent 5518864 It is recorded that a prepolymer PAA contains PSPI with phenolic hydroxyl structure. Although they all have the ability to develop, they all need to use an etching process for pattern transfer to obtain the desired pattern. [0003] The trad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10G03F7/039G03F7/004
CPCC08G73/1071C08G73/1007G03F7/039G03F7/004
Inventor 黎迈俊郑爽潘锦铖吴敏铭
Owner 广东粤港澳大湾区黄埔材料研究院
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