Yin-yang text complementary light intensity mask double-beam projection photoetching device and method

Abstract

The invention discloses a yin-yang text complementary light intensity mask double-beam projection photoetching device and method, which belong to the field of projection photoetching. The projection photoetching device comprises two forms, one form is a split type, the other form is a combined type, two split type light beams respectively enter two objective lenses, and the two combined type lightbeams share one objective lens. According to the equipment, two beams of light with the same or different wavelengths are used, one beam is manufacturing light, the other beam is auxiliary light, thetwo beams of light are modulated into a light intensity yin-yang complementary pattern, the auxiliary light has a correction effect on diffraction of the edge of the pattern generated by the manufacturing light, and the diffraction blur range of the edge of the pattern generated by the manufacturing light can be reduced or eliminated; therefore, the photoetching resolution ratio of the super-diffraction limit is achieved. The method is suitable for realizing the double-beam projection photoetching of the yin-yang text complementary light intensity mask, and compared with the design thought that the photoetching resolution is improved by reducing the wavelength of a light source of the traditional photoetching machine, the manufacturing difficulty and the manufacturing cost of the photoetching machine can be greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of lithography machines, and more specifically relates to a dual-beam projection lithography device and method for a mask plate with complementary light intensity of Yin and Yang characters. Background technique [0002] Historically, exposure lithography machine technology has experienced five generations of product development. The first generation is a 436nm light source contact proximity lithography machine, and its lithography process is several hundred nanometers; the second generation is a 365 nm light source contact proximity lithography machine, and its lithography process is slightly improved compared with the first generation; The third generation is a 248nm step-scan projection lithography machine, and its lithography process reaches 65nm; the fourth generation is a 193nm step-scan projection lithography machine and a 193nm immersion-type step-scan projection lithography machine, whose lithograph...

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Problems solved by technology

[0006] Aiming at the defects of the prior art, the object of the present invention is to provide a dual-beam projection lithography device and method for a yin-yang text complementary light-intensity mask plate, aiming at solving the problem of shortening the wavelength of the light source in the prior art which causes the development of the lithography machine. Problems with technically difficult and overall extremely expensive technologies

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