Probe-induced surface plasma resonance lithographic device and method

A technology of surface plasmon and resonant light, which is applied in the direction of microlithography exposure equipment, photolithography process exposure equipment, measurement equipment, etc., can solve the problems of lithography equipment not appearing, super-resolution mask thermal fatigue, super-resolution performance degradation, etc. Problems, easy maintenance and upgrades, improved positioning accuracy, and low laser power
CN101408736AInactive Publication Date: 2009-04-15SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Publication Date
2009-04-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides probe induction surface plasmon resonance lithographic equipment and a photoetching method thereof. The device consists of a surface plasma excitation device, a probe control device, a sample platform, a probe state detection device, an optical microscope and a control system. The device has the characteristics that the needed laser power is low, the photoetching distinguishability is high, the probe is not easy to be damaged, and the photoetching film is simple; in addition, the device has the function of an atomic force microscope.
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Description

technical field

[0001] The invention relates to a lithography device, in particular to a probe-induced surface plasmon resonance lithography device and a lithography method thereof. Background technique

[0002] With the rapid development of nano-processing, micro-electro-mechanical systems (MEMS), integrated circuits and other technologies, the lithography technology serving them has also become the focus of research in various countries. The lithography technology applied in the semiconductor industry is developing rapidly along the UV-DUV-EUV technical route, which meets the requirement of further shrinking the feature scale of micro-nano devices to a certain extent. However, in terms of nanofabrication, MEMS and some special integrated circuits, due to the characteristics of product personalization, small batches and shorter update cycles, it is impossible to use the technology used in large-scale integrated circuits for processing, and the photolithography used in the s...

Claims

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