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Power semiconductor module and power conversion device using same

A power semiconductor, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, power electronics modification, etc., can solve the problem of reaching the heat resistance temperature of power semiconductor components

Active Publication Date: 2016-06-15
HITACHI ASTEMO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the power conversion device outputs a large current, the heat generated in the power semiconductor element built in the power semiconductor module will increase, and the heat resistance temperature of the power semiconductor element will be reached if the heat capacity of the power semiconductor module and / or the power conversion device is not increased. , which becomes an obstacle to miniaturization

Method used

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  • Power semiconductor module and power conversion device using same
  • Power semiconductor module and power conversion device using same
  • Power semiconductor module and power conversion device using same

Examples

Experimental program
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Effect test

Embodiment approach

[0027] The power conversion device of this embodiment can be applied to hybrid vehicles and pure electric vehicles. As a representative example, the figure 1 and figure 2 , the control structure and circuit structure when applied to a hybrid vehicle (hybrid electric vehicle) will be described.

[0028] figure 1 It is a figure which shows the control block of a hybrid vehicle.

[0029] The power conversion device according to the present embodiment will be described taking, as an example, an inverter device for driving a vehicle (inverter device) which is used in a motor system for driving a vehicle and whose installation environment and operating environment are extremely strict.

[0030] The vehicle driving inverter converts DC power supplied from an on-vehicle battery or an on-vehicle power generator constituting a vehicle power supply into predetermined AC power, supplies the obtained AC power to a vehicle driving motor, and controls the driving of the vehicle driving mo...

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Abstract

The power semiconductor module includes: a first package having an upper arm circuit part; a second package having a lower arm circuit part; a metal forming a storage space for housing the first and second packages and an opening connected to the storage space. and an intermediate connection conductor connecting the above-mentioned upper arm circuit part and the above-mentioned lower arm circuit part, wherein the above-mentioned housing includes a first heat dissipation part and a second heat dissipation part opposite to the first heat dissipation part across the above-mentioned storage space, The first package is arranged such that the arrangement direction of the first and second packages is parallel to the respective opposing surfaces of the first and second heat dissipation parts, and the intermediate connection conductor is connected to the housing in the housing space of the case. The emitter-side terminal extending from the first package is connected to the collector-side terminal extending from the second package.

Description

technical field [0001] The present invention relates to a power semiconductor module for converting direct current into alternating current and a power conversion device using the power semiconductor module, and more particularly to a power semiconductor module for supplying alternating current to a driving motor of a hybrid vehicle or an electric vehicle and using the same Power conversion device for power semiconductor modules. Background technique [0002] In recent years, power conversion devices have been required to be capable of outputting large currents and also to be miniaturized. If the power conversion device outputs a large current, the heat generated in the power semiconductor element built in the power semiconductor module will increase, and the heat resistance temperature of the power semiconductor element will be reached if the heat capacity of the power semiconductor module and / or the power conversion device is not increased. , becoming an obstacle to minia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/48H01L25/07H01L25/18H05K7/20
CPCH05K7/209H01L25/115H01L25/18H01L23/367H01L23/4334H01L23/473H01L24/33H01L2924/13091H01L2924/13055H01L2224/32245H02M7/003H01L2924/07802H01L2924/181H05K7/14329H01L2924/00H01L2924/00012H05K7/1432H05K7/2089
Inventor 德山健中津欣也斋藤隆一佐藤俊也诹访时人
Owner HITACHI ASTEMO LTD
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