Manufacturing method of resistive memory and resistive memory
A manufacturing method and resistive technology, applied in electrical components and other directions, can solve the problems of data retention performance deterioration, activation) high voltage, increase memory power consumption, etc., to achieve the effect of improving retention performance
Inactive Publication Date: 2016-12-21
FUDAN UNIV
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[0003] Since AlOx is self-formed between WOx and Al electrodes through annealing, it is usually relatively thick, which leads to an increase in the resistance of the AlOx layer of the core layer of ReRAM, and finally makes the forming (activation) voltage of ReRAM too high, which Will increase memory power consumption and degrade data retention performance
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[0032] Presented below are some of the many possible embodiments of the invention, intended to provide a basic understanding of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of protection.
[0033] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.
[0034] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, s...
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Abstract
The invention relates to and provides a production method of a resistance type memory (ReRAM) and the resistance type memory, and belongs to the technical field of resistance type memories. The production method comprises the stepsas follows: forming a lower electrode layer; forming a WOx medium layer on the lower electrode layer; using a first reductive gas to implement a first annealing treatment for the surface of the WOx medium layer; forming an Al electrode on the surface of the WOx medium layer after the first annealing treatment; and using a second annealing treatment to enable one part of the WOx medium layer and one part of the Al electrode, contacted with each other, to form an AlOx storage function layer, wherein x is not greater than 3 and not smaller than 1. The resistance type memory prepared through the production method has the characteristics of low Forming voltage, good data retaining property and high Forming operation success rate.
Description
technical field [0001] The invention belongs to the technical field of resistive memory (ReRAM), and in particular relates to a manufacturing method for improving the performance of resistive memory through gas treatment and a resistive memory manufactured by the method. Background technique [0002] Resistive memory ReRAM has been widely developed and applied due to its durability and good access speed. Among them, ReRAM based on W / WOx / AlOx / Al is a common structural form, as shown in the attached figure 1 As shown, it forms WOx by plasma oxidation on W, then forms Al electrode on it, and finally forms AlOx between WOx and Al electrode by annealing to form the core layer of ReRAM. Impedance analysis shows that WOx acts as a series resistance (10-20kΩ), and the resistive switching process reflecting storage characteristics occurs in the high-resistance AlOx layer, and the initial resistance and Forming voltage are dominated by the AlOx layer. [0003] Since AlOx is self-form...
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IPC IPC(8): H01L45/00
Inventor 林殷茵宋雅丽杨玲明刘易
Owner FUDAN UNIV