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Buffer for raising voltage driving capability

A technology of voltage drive and buffer, applied in the direction of electrical components, logic circuits, pulse technology, etc., can solve problems such as circuit failure, achieve the effect of reducing current, reducing power consumption, and good stability

Inactive Publication Date: 2014-03-26
HUNAN CITY UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, when a voltage with low drive capability of 200mv drives a large load, the speed problem needs to be solved first. At this time, a buffer is needed to improve the drive capability of the voltage; when the voltage works in different environments, the output voltage Stability must also be fully guaranteed, otherwise it is easy to cause the circuit not to work properly, especially for low voltage

Method used

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  • Buffer for raising voltage driving capability
  • Buffer for raising voltage driving capability
  • Buffer for raising voltage driving capability

Examples

Experimental program
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Embodiment Construction

[0013] see figure 1 The high-speed buffer with simple structure, low voltage and high stability of the present invention is composed of four NMOS transistors MN1, MN2, MN3 and MN4, three PMOS transistors MP1, MP2 and MP3, and a resistor R.

[0014] The specific connection relationship is as follows, the drain of the NMOS transistor MN1 and the power supply V dd Connection, the gate is connected to the external control signal V con , the body end is grounded to GND, the source is connected to the source of PMOS transistors MP1 and MP2; the gate of PMOS transistor MP1 is connected to the external input signal V i , body-terminated supply V dd , the drain is connected to the drain and gate of the PMOS transistor MN2 and the gate of the PMOS transistor MN3; the two ends of the resistor R are set to the A terminal and the B terminal, the gate of the PMOS transistor MP2 is connected to the source of the NMOS transistor MN4, and the resistor The A terminal of R is connected, the d...

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PUM

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Abstract

The invention discloses a buffer for raising voltage driving capability. The buffer is provided with four NMOS tubes MN1, MN2, MN3 and MN4, three PMOS tubes MP1, MP2 and MP3 and a resistor R. In the buffer, a difference amplifier and output form negative feedback, and output voltage varies little with the change of the environment. A current source in the buffer adopts the NMOS tubes. That is to say, MN1 and MN4 replace previous PMOS tubes, thus greatly reducing current of the buffer and decreasing power consumption of the whole module. By the adoption of the resistor R for output, input level of the buffer stays at low level. The buffer provided by the invention has a simple structure and has strong driving capability. Meanwhile, stability of output voltage is guaranteed by the use of the buffer.

Description

technical field [0001] The invention relates to a low-voltage and high-stability high-speed buffer with simple structure, in particular to a driving capability buffer capable of improving low-voltage and low-driving signals. It can effectively improve the driving ability of low-voltage signals, and the output voltage has high stability. It is a high-speed buffer with excellent performance in low voltage and high stability. Background technique [0002] With the development of integrated circuit design technology, in the new generation of integrated circuit design, in order to achieve design goals, especially in order to reduce power consumption and increase speed, designers often use the multiple voltage (MSV) method to allow the use of different voltage designs Sub-entities or blocks, and the low-voltage logic introduced subsequently, in order to enhance the driving capability of low voltage, it is necessary to add a buffer between the low voltage and the load. For example...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0948
Inventor 杨格兰柏娜夏迎成朱贾峰
Owner HUNAN CITY UNIV
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