Method for automatically controlling growth of 85-120kg sapphire crystals

A sapphire crystal, automatic control technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low production efficiency of unit personnel, difficult sapphire crystal growth, long crystal production process, etc., to save manpower and material resources, Save labor costs and improve product quality

Active Publication Date: 2014-04-09
NANJING CRYSTAL GROWTH & ENERGY EQUIP CO LTD
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Problems solved by technology

[0012] At present, the growth of large-sized Kyropoulos sapphire crystals is difficult, and the degree of automation is generally not high. Its industrial production requires a large number of technicians to complete on-site, and the crystal production process is long, the labor intensity is huge, and the production efficiency of unit personnel is low.

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  • Method for automatically controlling growth of 85-120kg sapphire crystals
  • Method for automatically controlling growth of 85-120kg sapphire crystals

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Embodiment Construction

[0029] Such as figure 1 with figure 2 As shown, the present invention discloses an automatic control method for 85kg to 120kg sapphire crystal growth. According to the crystal growth rate, the present invention automatically adjusts the directional transmission of heat inside the thermal field through a certain algorithm to complete the automatic control technology for crystal production. It is characterized in that: During the entire crystal production process, except for the need for human assistance in loading and unloading, and seeding, all other processes such as shouldering, equal diameter, finishing, cooling, and gas inflation are all automatically operated by the computer in sequence. After the seeding is completed, the shouldering process is divided into 5 stages according to the weight, and the corresponding growth rate is set for different stages. The actual measured rate is compared with the rate value of each stage through PLC, and the temperature drop rate is ad...

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Abstract

The invention discloses a method for automatically controlling growth of 85-120kg sapphire crystals. The method comprises the step of sapphire crystal seeding and is characterized in that an electronic weighing device used for measuring the crystal weight is arranged in a single crystal furnace and sends a weight signal to a PLC (programmable logical controller) system; after sapphire crystal seeding is finished, the PLC judges the crystal growth stage in the growth process according to the crystal weight, calls out the process parameter packet of the corresponding stage and adjusts the parameters via PID (proportion integration differentiation); when the crystal net weight measured by the electronic weighing device exceeds 3-5kg, the PLC adjusts the temperature reduction amplitude and controls the sapphire crystals to grow in an isodiametric manner; when the crystal weight measured by the electronic weighing device exceeds 45-70kg, the PLC adjusts the temperature reduction amplitude and controls growth of the sapphire crystals to end; and when the reduction amplitude of the heater powder computed by the PLC exceeds 15-20%, the sapphire crystals are automatically transferred to the cooling and inflating stage and leave from the pot, thus completing growth.

Description

technical field [0001] The invention belongs to the large-scale sapphire crystal growth automatic control technology performed after seeding, in particular to an 85kg to 120kg sapphire crystal growth automatic control method. Background technique [0002] The composition of sapphire is aluminum oxide (Al2O3), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds. Its crystal structure is a hexagonal lattice structure. It is often used in A-Plane, C-Plane and R-Plane. Due to the wide optical penetration band of sapphire, it has good light transmission from near ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components, infrared devices, high-intensity Laser lens material and mask material, it has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point (2045 ℃), etc. It is a very difficult material to process, so i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/20
Inventor 李辉王辉辉姜宏伟毛洪英
Owner NANJING CRYSTAL GROWTH & ENERGY EQUIP CO LTD
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