A Simulation Method of DC Characteristics of Insulated Gate Bipolar Transistor

Abstract

The invention provides a method for simulating the direct-current feature of an insulated gate bipolar transistor. The method for simulating the direct-current feature of the insulated gate bipolar transistor comprises the following steps that direct-current feature test data of the insulated gate bipolar transistor at different temperatures and different breadth-to-length ratios are obtained; a direct-current macro-model of the insulated gate bipolar transistor is established, and a voltage-controlled drift region resistor representing the electric conductance modulation effect of the insulated gate bipolar transistor is additionally arranged on the basis of the combination of an NMOS transistor and a PNP transistor; an initial model file of the direct-current macro-model of the insulated gate bipolar transistor is obtained; the model parameters of the direct-current macro-model are extracted when the insulated gate bipolar transistor is at 25 DEG C; test data obtained when the insulated gate bipolar transistor is at 85 DEG C and 125 DEG C continue to be loaded into an MBP, and temperature parameters of the direct-current macro-model of the insulated gate bipolar transistor are extracted; the model parameters of the direct-current macro-model of the insulated gate bipolar transistor are saved; the output feature of the insulated gate bipolar transistor is obtained through simulation in Cadence, and therefore the insulated gate bipolar transistor simulation method is established.

Description

technical field [0001] The invention relates to the simulation field of high-voltage power semiconductor devices, in particular to a DC characteristic simulation method of an insulated gate bipolar transistor, which is suitable for the circuit simulation design of a display drive chip, a half-bridge drive chip and an intelligent power module. Background technique [0002] With the continuous improvement of the theoretical research and manufacturing process level of power semiconductor devices, the insulated gate bipolar devices that appeared in the 1980s combined the high-current handling capability of high-voltage triodes and the characteristics of gate-controlled MOS transistors, with high input impedance, high With the advantages of fast switching speed, small driving power, large current driving capability and low on-resistance, it is a nearly ideal power semiconductor device with broad development and application prospects. In the design process of power integrated circ...

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Problems solved by technology

However, there is no mature and complete simulation method for IGBT devices so far.

In some of the existing studies, some of them focus on a certain characteristic of the IGBT, and some focus on the physical model, electrothermal model, analytical model and self-heating model of the IGBT. They focus on For the theoretical analysis of the characteristics of IGBT devices, there is no effective method that can be actually applied to the circuit simulation software Cadence for simulation.

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