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Memory and method of reading memory

A technology of memory and storage unit, applied in the field of memory, can solve the problem of high power consumption of memory, and achieve the effects of reducing power consumption, reading current and reference current.

Active Publication Date: 2017-01-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The present invention solves the problem of high power consumption when reading the memory

Method used

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  • Memory and method of reading memory

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Experimental program
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Embodiment Construction

[0048] for figure 2 In the reading structure of the memory cell shown, by comparing the reference current provided by the reference current source Iref with the read current of the memory cell M10, it is determined whether the data stored in the memory cell M10 is "1" or is "0". As a reference for comparison, the reference current source Iref provides a DC reference current. The current value of the reference current is determined according to the read current when the memory unit M10 stores data "1" and the read current when the data "0" is stored, and its magnitude directly determines when the memory unit M10 performs a read operation. power consumption.

[0049] image 3 is a schematic diagram of the read current of the memory cell M10 and the change of the reference current with time. refer to image 3 , the abscissa represents time; the ordinate represents current; the straight line L30 represents the readout current when the memory cell M10 stores data “0” (that is...

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Abstract

The invention provides a memory and a reading method of the memory. The reading method of the memory comprises the following steps: applying 0V voltage to a source line connected to an objective memory unit, applying a first readout voltage with a positive voltage value to a word line connected to the objective memory unit, and applying a second readout voltage with a negative voltage value to a first control grid line and a second control grid line connected with the objective memory unit; and reading electric current on a bit line connected with the objective memory unit by a readout circuit. The memory and the reading method of the memory, provided by the invention, have the advantages that the power consumed during readout operation of the memory is reduced.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a memory and a reading method thereof. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (EEPROM, Electrically Erasable Programmable Read-Only Memory) is a semiconductor storage device with a byte as the minimum unit of modification, which can be electronically rewritten multiple times. Compared with Erasable Programmable Read-Only Memory (EPROM, Erasable Programmable Read-Only Memory), EEPROM does not need to be irradiated with ultraviolet rays or removed, and a specific voltage can be used to erase the information on the chip for writing new data. Due to the excellent performance of EEPROM and the convenience of online operation, it is widely used in BIOS chips and flash memory chips that need to be frequently erased, and gradually replaces some random access memory (RAM, Random Access Memory) chips that require power-off retention. , and even r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06G11C16/26
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP