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Circuit structure and method for realizing soft commutation control of low-noise and high-efficiency motor drive

A technology of motor drive and circuit structure, applied in the field of motor drive commutation control and motor drive, can solve problems such as energy loss and commutation shock, and achieve the effects of improving reliability, reducing commutation shock, and improving system work efficiency

Active Publication Date: 2016-06-08
绍兴光大芯业微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the above-mentioned soft commutation technology has solved the problems of commutation shock and audible noise, it has caused great energy loss

Method used

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  • Circuit structure and method for realizing soft commutation control of low-noise and high-efficiency motor drive
  • Circuit structure and method for realizing soft commutation control of low-noise and high-efficiency motor drive
  • Circuit structure and method for realizing soft commutation control of low-noise and high-efficiency motor drive

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Embodiment Construction

[0041] In order to describe the technical content of the present invention more clearly, further description will be given below in conjunction with specific embodiments.

[0042] The feature of the present invention is that the soft commutation technology of the present invention is to sample the coil current, and the change speed of the coil current and the predetermined current is controlled by a comparator to control the change speed of the coil current. This not only achieves the purpose of micro-commutation impact and no audible noise, but also realizes the purpose of high-efficiency work.

[0043] Such as Figure 4 as shown, Figure 4 Among them, P1 and P2 represent PMOS field effect transistors, N1 and N2 represent NMOS field effect transistors, Vref1 and Vref2 are gradual reference voltage signals, which are used to control the change speed of current passing through L during commutation: assuming that the current flow direction is as follows Figure 4As shown by th...

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Abstract

The invention relates to a circuit structure and a method for realizing low-noise and high-efficiency motor driven soft commutation control. The circuit structure comprises a first P-channel metal oxide semiconductor (PMOS) field-effect tube, a second PMOS field-effect tube, an inductive load, a first N-channel metal oxide semiconductor (NMOS) field-effect tube, a second NMOS field-effect tube, a load current sampling resistor, a first comparator, a second comparator, a first controller and a second controller, wherein the first controller is used for opening and closing the first PMOS field-effect tube depending on an output result of the first comparator, and the second controller is used for opening and closing the second PMOS field-effect tube depending on an output result of the second comparator. Through the structures, the circuit structure and the method for realizing the low-noise and high-efficiency motor driven soft commutation control can reduce commutation impact and audible noise, improve system working reliability and save system cost; the circuit structure and the method can obviously improve system working efficiency, power density and reliability, and can widen application scope.

Description

technical field [0001] The invention relates to the technical field of motor drive, in particular to the technical field of commutation control of motor drive, and specifically refers to a circuit structure and method for realizing soft commutation control of motor drive with low noise and high efficiency. Background technique [0002] Since the motor has an inductive load, the earliest motor drive controllers would have serious or even fatal impacts due to the sharp change of the inductive coil current during phase commutation, with significant audible noise, and the necessary protection must be added to the system Circuits can suppress this kind of impact and noise. However, even with these measures, the results are still unsatisfactory. Such as figure 1 as shown, figure 1 Among them, VDD is the power supply, P1 and P2 represent PMOS field effect transistors, N1 and N2 represent NMOS field effect transistors, and L represents inductive load: assuming that the current is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02P6/14
CPCY02P80/10
Inventor 田剑彪王换飞
Owner 绍兴光大芯业微电子有限公司