Semiconductor device and method of forming the same

Abstract

A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in the substrate adjacent to the NMOS gate structure. The method also includes forming a lightly doped source / drain (LDD) region in the amorphized region. The method further includes depositing a stress film over the NMOS gate structure, performing an annealing process, and removing the stress film.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technology, and more particularly, to semiconductor devices and methods of forming the same. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. In the course of IC development, typically functional density (ie, the number of interconnected devices per chip area) increases while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) decreases. This scaled-down process generally provides advantages by increasing production efficiency and reducing associated costs. This scaling process also increases the complexity of processing and manufacturing ICs, and similar developments in IC manufacturing are required to achieve these advances. [0003] For example, as semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) scale through various technology no...

AI Technical Summary

Problems solved by technology

Although existing methods of forming stressor regions for IC devices are often adequate for their intended purpose, they are not entirely satisfactory in all respects

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