A method for preparing thin films by dual-frequency magnetron sputtering based on radio frequency and very high frequency

Abstract

The invention discloses a preparation method of a radio frequency and very high frequency based double frequency magnetron sputtering film, which is implemented by using a double-target magnetron sputtering device, and comprises the following steps: (1) installing targets for preparing a two-component film, and putting a cleaned substrate into a vacuum chamber, wherein the distance between the center of a sputtering target to the center of a substrate platform is 130 mm; (2) vacuumizing the vacuum chamber to be 5*10<-4> Pa, then feeding argon into the vacuum chamber, and under the condition that the flow of argon is 30 sccm, keeping the pressure of the vacuum chamber at 5 Pa; (3) applying a very high frequency power supply with a frequency of 60 MHZ on one of the targets, adjusting the very high frequency power to be 150 W, applying a radio frequency power supply with a frequency of 2 MHZ on the other target, and adjusting the radio frequency power to be 50-250 W; preparing a two-component film on the substrate by sputtering. By using the frequency decoupling performance between radio frequency and very high frequency, the respective independent control on the ion energies of double sputtering targets is realized, and the approximation of plasma properties (energy, density) of each sputtering target is avoided, thereby facilitating the independent control on each component sputtering.

Description

technical field [0001] The invention relates to a method for preparing a thin film, in particular to a method for preparing a thin film by dual-frequency sputtering using radio frequency and very high frequency power supplies to independently control ion energy. Background technique [0002] With BaYCuO high temperature superconducting materials, doped ZnO luminescent materials, doped HfO x The development and application of advanced materials such as high dielectric constant materials, multi-component thin film materials, especially bicomponent thin films have attracted people's attention, and the preparation technology of bicomponent thin films has become the key to their development and application. Due to its mature technology, good controllability and low equipment investment, magnetron sputtering has become the most important technology for preparing bicomponent thin films. Since the special properties of bicomponent thin film materials mainly depend on the ratio of e...

AI Technical Summary

Problems solved by technology

When using two-component single solid target and chip target to sputter-deposit multi-component thin films, due to the difference in the sputtering threshold energy of various target materials, when using a power source to sputter these target materials, various components The sputtering yield of the element cannot be controlled independently, and as a result, there is a large component deviation between the deposited film material and the target material, so it is necessary to continuously adjust the composition ratio of the target or change the patch ratio of the target, and the result is that each component Sputtering is difficult to precisely control independently

When dual-target co-sputtering is used, the dual-target magnetron sputtering device is mainly used, which generally includes a vacuum system, an air intake system, a power supply system, a vacuum chamber, a substrate table, two sputtering targets, and a sputtering Target drive power supply, since the current dual-target sputtering technology mainly uses a combination of DC power supply and 13.56MHz RF power supply, or a combination of two 13.56MHz RF power supplies to drive two sputtering targets, it is easy to cause electric field coupling between the two targets, resulting in The problem is that the electric field between the two targets interferes with each other during sputtering, or the plasma performance (energy, density) of each target sputtered by dual RF power sources with the same frequency is basically close, which makes the sputtering of the two target components difficult. independent regulation

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