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High indium uptake and high polarization ratio for group-III nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate

A technology for optoelectronic devices and gallium nitride substrates, which is applied in semiconductor devices, electrical components, circuits, etc., and can solve the problems of low polarizability and difficulty in realizing long-wavelength emission.

Inactive Publication Date: 2014-07-16
RGT UNIV OF CALIFORNIA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Although high polarizability of m-plane devices has been reported [18–19], long-wavelength emission is difficult to achieve on this plane due to defects generated at high indium composition
On the other hand, the semipolar (20–21) orientation has shown desirable performance at long wavelengths, but the reported polarizability is relatively low [17]

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  • High indium uptake and high polarization ratio for group-III nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate
  • High indium uptake and high polarization ratio for group-III nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate
  • High indium uptake and high polarization ratio for group-III nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate

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Embodiment Construction

[0022] In the following description of the preferred embodiment, reference is made to the drawings as a part thereof, and specific embodiments in which the present invention can be practiced are shown in the drawings in an illustrative manner. It should be understood that other embodiments may be used and structural changes may be made without departing from the scope of the present invention.

[0023] Summary

[0024] The present invention discloses a group III nitride-based optoelectronic device grown on a half-polarized (20-2-1) plane of a GaN substrate, which is a miscut of the m-plane in the c-direction . This type of device is referred to herein as a (20-2-1) device and is characterized by high indium absorption and high polarizability.

[0025] The semi-polarized (20-2-1) plane of the GaN substrate is inclined at an angle of about 15° from the non-polarized (m-plane) (10-10) plane to the [000-1] direction, and from the semi-polarized (20- 21) The face is inclined at an ang...

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Abstract

A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.

Description

[0001] Cross references to related applications [0002] This application requires a submission entitled "HIGH INDIUM UPTAKES AND HIGH POLARIZATION" by Yuji Zhao, Shinichi Tanaka, Chia-yen Huang, Daniel F. Feezell, James S. Speck, Steven P. Denbaars and Shuji Nakamura on April 29, 2011. RATIO ON GALLIUM NITRIDE SEMIPOLAR(20-2-1) SUBSTRATES FOR III-NITRIDE OPTOELECTRONIC DEVICES" co-pending and co-assigned U.S. Provisional Patent Application Serial No. 61 / 480,968 (Attorney No. 30794.411-US-P1 (2011- 580-1)) Based on the benefits of Section 119(e) of Section 35 of the United States Code, this application is incorporated herein by reference. Technical field [0003] The present invention relates generally to the field of optoelectronic devices, and more specifically to a III-nitride light-emitting device manufactured on the half-polarized (20-2-1) plane of a gallium nitride (GaN) substrate, wherein the characteristics of the device It lies in high indium absorption and high polarizab...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/16H01L33/32H01L33/0075H01L33/00
Inventor 赵宇吉S·田中黄嘉彦D·F·费泽尔J·S·司倍克S·P·登巴尔斯S·纳卡姆拉
Owner RGT UNIV OF CALIFORNIA