A turn-off scr device with latch-up resistance

A technology of anti-latch-up and ability, which is applied in the electronic field, can solve the problems of low maintenance voltage and burn-out devices, etc., and achieve the effect of reducing gain and preventing latch-up effect
CN103972233BActive Publication Date: 2016-11-02UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2016-11-02

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Abstract

The invention relates to an electronic technology, and particularly relates to an SCR (Semiconductor Control Rectifier) shut-off device with latching resistant capability. When an ESD (Electronic Static Discharge) pulse is additionally added, an RC (Remote Control) trigger circuit provides a high potential for grid voltage to start an NMOS (N-channel Metal Oxide Semiconductor), so that an SCR is effectively started, and the purpose of current leakage is achieved; after the current of the ESD pulse leaks, the RC trigger circuit provides a low potential for the grid voltage to start a PMOS (P-channel Metal Oxide Semiconductor), the gain of a parasitic NPN transistor is reduced, the condition of latching effect can not be met, and the SCR is effectively shut off, so that the latching effect is prevented from being generated under an electrifying condition. The SCR shut-off device disclosed by the invention is especially suitable for SCR devices used for ESD protection.
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Description

technical field

[0001] The present invention relates to electronic technology, specifically relates to the electrostatic discharge (ElectroStatic Discharge, ESD for short) protection circuit design technology of semiconductor integrated circuit chips, especially a kind of SCRESD protection device with high latch up immunity that can be turned off. Background technique

[0002] In the process of chip production, packaging, testing, storage, and handling, electrostatic discharge is ubiquitous as an inevitable natural phenomenon. With the reduction of the feature size of integrated circuit technology and the development of various advanced technologies, it is more and more common for chips to be damaged by ESD phenomena. Relevant research and investigations have shown that 30% of integrated circuit failure products are caused by electrostatic discharge phenomena. caused. Therefore, it is very important to use high-performance ESD protection devices to protect the internal circ...

Claims

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