35results about How to "Effective shutdown" patented technology

The invention discloses a voltage type collision detection circuit, comprising: a collision signal generator, a collision signal processing circuit and a microprocessor connected in sequence; the collision signal processing circuit comprises a switch circuit, a voltage divider circuit and a comparison circuit connected in sequence; The switch circuit includes: a first resistor and a transistor, one end of the first resistor is coupled to the collision signal generator, and the other end of the first resistor is coupled to the gate of the transistor; the voltage divider circuit includes: a second resistor and a third resistor, One end of the second resistor is coupled to the positive electrode of the first power supply, and the other end of the second resistor is coupled to one end of the third resistor and the drain of the transistor, respectively; the comparison circuit includes: a comparator, the non-inverting end of the comparator is connected to the first The other ends of the two resistors are coupled, the output end of the comparator is coupled to the microprocessor, and the positive electrode of the comparator is coupled to the positive electrode of the second power supply. The present invention can ensure that the transistor is effectively turned off, and avoid potential system power consumption or device damage.

The invention relates to an electronic technology, and particularly relates to an SCR (Semiconductor Control Rectifier) shut-off device with latching resistant capability. When an ESD (Electronic Static Discharge) pulse is additionally added, an RC (Remote Control) trigger circuit provides a high potential for grid voltage to start an NMOS (N-channel Metal Oxide Semiconductor), so that an SCR is effectively started, and the purpose of current leakage is achieved; after the current of the ESD pulse leaks, the RC trigger circuit provides a low potential for the grid voltage to start a PMOS (P-channel Metal Oxide Semiconductor), the gain of a parasitic NPN transistor is reduced, the condition of latching effect can not be met, and the SCR is effectively shut off, so that the latching effect is prevented from being generated under an electrifying condition. The SCR shut-off device disclosed by the invention is especially suitable for SCR devices used for ESD protection.

The invention discloses a manufacturing method of a high voltage silicon rectifier stack with low power consumption and quick switching and plastic packaging and the high voltage silicon rectifier stack. The manufacturing method disclosed by the invention comprises the steps of diode crystalline grain preparation, switch tube preparation, filling, welding, washing and packaging. By using differentcoefficients of thermal expansion and shape changes of crystalline grains and soldering lugs at high temperature, automatic pulling for the crystalline grains after welding can be realized without the need of aligning the crystalline grains in advance before welding, the air hole area is greatly reduced, the welding quality is improved, and the electrical yield of the crystalline grains after acid pickling of a mixed acid prepared from hydrofluoric acid, acetic acid, sulfuric acid and nitric acid in a volume ratio of 8.8: 13: 5.6: 9.2 is high. Measured data indicates that the forward voltageof the silicon rectifier stack cannot exceed 8 V when the backward voltage is 10000 V under the condition that other parameters are not influenced, and effective turning-off can be realized within extremely time of 17 ns, so that the high frequency rectification problem at high voltage and low power consumption is solved.