Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory recovery method and device

A technology of memory recycling and memory pages, which is applied in the computer field, can solve problems such as uneven wear of memory pages, and achieve the effect of improving stability, reliability, and wear balance

Active Publication Date: 2018-01-23
HUAWEI TECH CO LTD +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a memory recycling method, aiming to solve the problem of uneven wear of NVM memory pages

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory recovery method and device
  • Memory recovery method and device
  • Memory recovery method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention , but not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0044]It should be noted that the memory reclamation method in the embodiment of the present invention can be applied to a memory reclamation device whose memory module is a hybrid type, that is, the memory module of the memory reclamation device is composed of a dynamic random access memory (English full name Dynamic Random Access Memory, referred to as DRAM) and non- Volatile memory (E...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the present invention provide a memory recycling method and device. The memory recycling method includes: receiving a memory recycling request message, the memory recycling request message includes a recycling identifier, and the recycling identifier is used to indicate the number of memory pages that are requested to be recycled; according to the recycling identifier, according to Non-volatile memory NVM inactive memory pages are written in ascending page order to reclaim NVM inactive pages. The memory recovery method and device in the embodiment of the present invention are written according to the order of NVM inactive memory pages from small to large Recycling NVM inactive pages realizes that the NVM inactive memory pages that have been written to a relatively small number of pages are recycled first, and the NVM inactive memory pages that are written to a relatively large number of pages are recycled, so that the wear of NVM memory pages can be balanced , improving the stability and reliability of the storage unit.

Description

technical field [0001] Embodiments of the present invention relate to the field of computer technology, and in particular, to a memory recovery method and device. Background technique [0002] The memory devices that make up the memory unit usually include dynamic random access memory (English full name Dynamic Random Access Memory, referred to as DRAM) and non-volatile memory (English full name Non-Volatile Memory, referred to as NVM). DRAM can withstand a high number of writes, but it can The degree of integration is low, and the storage space that can be integrated is limited. The integration of NVM is higher, and memory units with larger memory capacity can be integrated, but the number of writes that can be tolerated is relatively low. As people's requirements for memory capacity of storage devices increase It is expected that the memory capacity of the storage device will become larger and more stable and reliable. Therefore, a memory unit with a hybrid structure compo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246G06F2212/7205G06F2212/7211G06F12/0253G06F12/0238G06F2212/202G06F2212/702
Inventor 夏飞蒋德钧魏巍熊劲
Owner HUAWEI TECH CO LTD