Plasma processing assembly including hinge assembly

Abstract

In one embodiment, a plasma processing assembly can include an upper processing body coupled to a hinge body and a lower processing body coupled to a base hinge member. The hinge body is pivotally engageable with the base hinge member. A self-latch is pivotally engageable with the base hinge member. When the hinge body rotates about the first axis of rotation, the male latch engaging member can contact the self-latch and rotate the self-latch about the second axis of rotation in a direction opposite to the biasing direction. The self-latching latch can rotate around the second rotation axis in a biasing direction and can prevent the hinge body from rotating around the first rotation axis.

Description

technical field [0001] The present description relates generally to plasma processing assemblies, and more particularly, to plasma processing assemblies including hinge assemblies. Background technique [0002] Plasma processing assemblies can be used to etch material away from substrates formed of, for example, semiconductors or glass. A plasma processing assembly may include a vacuum chamber enclosing a plasma processing gas capable of being ionized and converted into a plasma. For example, a radio frequency source (RF source) can apply radio frequency energy (RF energy) to a process gas to generate a plasma. In some plasma processing assemblies, multiple electrodes and dielectric rings can be concentrically aligned to direct RF energy to desired portions of the substrate. [0003] Furthermore, one electrode can be coupled to the lower processing body and the other electrode can be coupled to the upper processing body. The lower handling body and the upper handling body...

AI Technical Summary

Problems solved by technology

This periodic maintenance can lead to misalignment between the upper and lower treatment bodies

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